Ceramic copper-clad plate, preparation method thereof and ceramic circuit board
A ceramic copper clad laminate and ceramic substrate technology, which is applied in the direction of circuit substrate materials, printed circuit precursors, printed circuits, etc., can solve the problems of aggravating copper layer cracks and warping and peeling, so as to improve easy warping and peeling, improve copper Layer cracks, the effect of improving electrical conductivity and reliability
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[0035] In a second aspect, the embodiment of the present application provides a method for preparing a ceramic copper clad laminate 10, comprising: directly bonding the ceramic substrate 11 and the conductive copper plate 12 under heating conditions.
[0036] The ceramic copper clad laminate 10 obtained by bonding the ceramic substrate 11 and the conductive copper plate 12 under heating conditions, since the conductive copper plate 12 includes a single crystal domain copper layer 121, and the copper in the single crystal domain copper layer 121 is single crystal domain copper, There is no grain boundary in each single crystal domain, which can significantly improve the problems of cracks and warping and peeling of the copper layer in the ceramic copper clad laminate 10 , and can improve the electrical conductivity of the ceramic copper clad laminate 10 . Exemplarily, the heating temperature during bonding is 1050-1100°C, such as any one of 1050°C, 1060°C, 1070°C, 1080°C, 1090°C...
Embodiment 1
[0047] This embodiment provides a ceramic copper-clad laminate, which includes a laminated ceramic substrate and a conductive copper plate, one side of the ceramic substrate is provided with a conductive copper layer, and its preparation process includes:
[0048] The polycrystalline copper plate with a thickness of 50um is annealed for the first time under the condition of 1050°C to obtain a single crystal domain copper layer, and the single crystal domain copper layer is electroplated and thickened to form a thickness of 200um on the surface of the single crystal domain copper layer. The copper layer is then annealed for the second time under the condition of 700° C. to obtain a conductive copper plate with a single crystal domain copper layer and an annealed electroplated copper layer.
[0049] The conductive copper plate is bonded to a ceramic substrate with a thickness of 200 um at a temperature of 1050° C. and the single crystal domain copper layer is in contact with the ...
Embodiment 2
[0051] This embodiment provides a ceramic copper-clad laminate, which includes a laminated ceramic substrate and a conductive copper plate. Both sides of the ceramic substrate are provided with conductive copper layers. The preparation process includes:
[0052] The polycrystalline copper plate with a thickness of 75um is annealed for the first time under the condition of 1000°C to obtain a single crystal domain copper layer, and the single crystal domain copper layer is thickened by electroplating, and then electroplated copper with a thickness of 400um is formed on the surface of the single crystal domain copper layer 121 layer, and then perform a second annealing at 800°C to obtain a conductive copper plate with a single crystal domain copper layer and an annealed electroplated copper layer.
[0053] The conductive copper plate is bonded to the ceramic substrate with a thickness of 400 um at a temperature of 1050° C. so that the single crystal domain copper layer is in conta...
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