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Solid-state imaging device

A technology of solid-state imaging device and pixel unit, which is applied in the direction of electric solid-state devices, image communication, semiconductor devices, etc., can solve the problems of signal size variation and high intensity, and achieve the effect of suppressing black level fluctuations

Active Publication Date: 2021-04-30
HAMAMATSU PHOTONICS KK
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  • Description
  • Claims
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Problems solved by technology

However, in reality, when the intensity of light incident on the photodiode of another pixel portion is high, the magnitude of the signal output from the light-shielded pixel portion may vary.

Method used

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Embodiment Construction

[0026] Hereinafter, modes for implementing the present invention will be described in detail with reference to the drawings. In addition, in the description of the drawings, the same reference numerals are attached to the same elements, and overlapping descriptions are omitted. The present invention is not limited to these illustrations.

[0027] figure 1 It is a diagram showing the configuration of the solid-state imaging device 1 . The solid-state imaging device 1 includes a pixel array unit 10 , a current source array unit 20 , a signal reading unit 30 , and a control unit 40 .

[0028] The pixel array unit 10 includes a plurality (N) of pixel units P( 1 ) to P(N) arranged in the first direction. The first direction in this figure is the horizontal direction. The N pixel units P(1) to P(N) are arranged in this order. The N pixel portions P( 1 ) to P(N) include a photodiode, an amplifying MOS transistor, and the like, and have a common structure. The n-th pixel portion...

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Abstract

A solid-state imaging device (1) comprises a pixel array unit (10) and a current source array unit (20). The pixel array unit includes N pixel units P(1) to P(N) arranged in a first direction. Each pixel unit includes a photodiode PD and a MOS transistor for amplification (M11. The current source array unit includes N current sources I(1) to I(N). Each current source includes a first MOS transistor (M21), a second MOS transistor (M22), a third MOS transistor (M23), a fourth MOS transistor (M24), and a set circuit (SET). The set circuit (SET) sets an ON / OFF state of the third MOS transistor (M23) on the basis of the voltage of a signal line L(n) to suppress a fluctuation in the amount of current flowing from a Vr supply line to a ground potential supply end via a common node (Nc) and the first MOS transistor (M21). Accordingly, a solid-state imaging device is realized that can more reliably suppress a black level fluctuation.

Description

technical field [0001] The present invention relates to a solid-state imaging device. Background technique [0002] The solid-state imaging device of the APS (Active Pixel Sensor (active pixel sensor)) method includes: a pixel array unit in which pixel units each including a photodiode and an amplifying MOS transistor are arranged in one or two dimensions; a signal reading unit, It sequentially reads out signals output from each pixel portion to the signal line to the outside; and a current source is connected to the signal line. The amplifying MOS transistors and current sources of the respective pixel portions connected to each other via signal lines constitute a source follower circuit. [0003] In such an APS-type solid-state imaging device, if light is previously shielded from a certain pixel portion among the plurality of pixel portions so that light does not enter the photodiode of the pixel portion, ideally, it does not depend on the light incident on other pixel po...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H04N5/359H04N5/374
CPCH04N25/60H04N25/677H04N25/78H04N25/767
Inventor 吉村英敏杉山行信
Owner HAMAMATSU PHOTONICS KK
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