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Preparation process of long-life diode

A preparation process and diode technology, which is applied in semiconductor/solid-state device manufacturing, electrical components, circuits, etc., can solve the problems of difficult concentricity assurance, many pitting, and unclean cleaning.

Active Publication Date: 2021-05-04
SHANDONG RONGCHUANG ELECTRONICS TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0012] The purpose of the present invention is to provide a long-life diode preparation process to solve the problem of the upper and lower leads of the diode welding material in the diode welding process in the prior art. It is difficult to guarantee the concentricity, there are many pitting points in the cleaning process, the cleaning is not clean, and the stress is not completely relieved. It has the characteristics of high stability and long service life.

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  • Preparation process of long-life diode
  • Preparation process of long-life diode
  • Preparation process of long-life diode

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0061] Example 1. A preparation process for a long-life diode, characterized in that:

[0062] Including the following steps:

[0063] Step 1: Preparation of Diode Die

[0064] 1.1: Pre-cut in the thickness direction of the silicon wafer to form incompletely cut diode grains, and the cutting depth of the silicon wafer is 2 / of the total thickness of the silicon wafer.

[0065] 1.2: Put the pre-cut silicon wafer in the thickness direction N side down on the crystal cracking paper, with the cutting edge facing upward, and press lightly, so that the incompletely cut diode crystal grains are completely cracked to form a wafer.

[0066] Step 2: Rosin Isopropanol Solution Sprayed to Copper Lead Electrodes

[0067] In the rosin isopropanol solution, the mass ratio of rosin to isopropanol is 1:10;

[0068] Step 3: Filling

[0069] Put two copper lead electrodes 1, two soldering pieces 2, and chip 3 into the fixture; each copper lead electrode includes a table top 12 and a lead wi...

Embodiment 2

[0090] Example 2. A preparation process for a long-life diode, characterized in that:

[0091] Including the following steps:

[0092] Step 1: Preparation of Diode Die

[0093] 1.1: Pre-cut in the thickness direction of the silicon wafer to form incompletely cut diode grains, and the cutting depth of the silicon wafer is 3 / 4 of the total thickness of the silicon wafer;

[0094] 1.2: Put the pre-cut silicon wafer in the thickness direction N side down on the crystal cracking paper, with the cutting edge facing upward, and press lightly, so that the incompletely cut diode crystal grains are completely cracked to form a wafer.

[0095] Step 2: Rosin Isopropanol Solution Sprayed to Copper Lead Electrodes

[0096] In the rosin isopropanol solution, the mass ratio of rosin to isopropanol is 1:10-15;

[0097] Step 3: Filling

[0098] Put two copper lead electrodes 1, two soldering pieces 2, and chip 3 into the fixture; each copper lead electrode includes a table top 12 and a lea...

Embodiment 3

[0118] Example 3. A preparation process for a long-life diode, characterized in that:

[0119] Including the following steps:

[0120] Step 1: Preparation of Diode Die

[0121] 1.1: Pre-cut in the thickness direction of the silicon wafer to form incompletely cut diode grains, and the cutting depth of the silicon wafer is 2 / 3 of the total thickness of the silicon wafer;

[0122] 1.2: Put the pre-cut silicon wafer in the thickness direction N side down on the crystal cracking paper, with the cutting edge facing upward, and press lightly, so that the incompletely cut diode crystal grains are completely cracked to form a wafer.

[0123] Step 2: Rosin Isopropanol Solution Sprayed to Copper Lead Electrodes

[0124] In the rosin isopropanol solution, the mass ratio of rosin to isopropanol is 1:12;

[0125] Step 3: Filling

[0126]Put two copper lead electrodes 1, two soldering pieces 2, and chip 3 into the fixture; each copper lead electrode includes a table top 12 and a lead wi...

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Abstract

The invention discloses a preparation process of a long-life diode. The preparation process comprises the following steps: step 1, preparing a diode crystal grain; step 2, spraying an atomized rosin isopropanol solution to a copper lead electrode; step 3, performing filling; step 4, performing welding; step 5, performing cleaning; and step 6, performing plastic packaging. The diode produced by the method is small in pore area and high in yield, and the problem that welding is not dense and firm is effectively solved. The reliability of the product at high temperature is improved, and especially the indexes of reverse stable withstand voltage, stable low forward voltage drop, high-temperature leakage current, service life and the like of the diode are effectively improved.

Description

technical field [0001] The invention relates to the manufacture of semiconductor diodes, in particular to a preparation process of the diodes. Background technique [0002] In addition, in the prior art, the upper and lower graphite boats must have considerable concentricity, and the concentricity of the upper and lower leads of materials welded with poor concentricity is difficult to guarantee. In this way, at least the following disadvantages will occur: A. Difficult, in serious cases, the material will be broken; when B is formed, the wafer will be subject to undue cutting stress (this stress will increase the IR and reduce the PIV), and in severe cases, the grains will break, especially for SKY and GPP devices. Since the front welding area of ​​these two types of devices is strictly limited, poor concentricity will not only cause the above-mentioned disadvantages, but also cause solder to overflow the welding area and cause short circuit or LP. There is no good way to c...

Claims

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Application Information

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IPC IPC(8): H01L21/78H01L21/48H01L21/56H01L29/861
CPCH01L21/78H01L21/4821H01L21/56H01L29/861
Inventor 李斌李金栋
Owner SHANDONG RONGCHUANG ELECTRONICS TECH CO LTD
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