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Manufacturing method of high-stability open-junction plastic package silicon rectifier diode

A silicon rectifier diode, a high-stability technology, applied in semiconductor/solid-state device manufacturing, semiconductor devices, electrical components, etc., can solve problems such as many pits, unclean cleaning, and difficulty in ensuring concentricity, so as to ensure stability , Solve the problem of concentricity and reduce the effect of welding stress

Active Publication Date: 2021-04-16
SHANDONG RONGCHUANG ELECTRONICS TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0011] The purpose of the present invention is to provide a method of manufacturing an open-junction plastic-encapsulated silicon rectifier diode to solve the difficulty in ensuring the concentricity of the upper and lower leads of the diode welding material in the diode welding process in the prior art, and there are pits in the cleaning process Too many, cleaning is not clean, stress relief is not complete and other problems, it has the characteristics of high stability and long service life

Method used

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  • Manufacturing method of high-stability open-junction plastic package silicon rectifier diode
  • Manufacturing method of high-stability open-junction plastic package silicon rectifier diode
  • Manufacturing method of high-stability open-junction plastic package silicon rectifier diode

Examples

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Comparison scheme
Effect test

Embodiment 1

[0064] Example 1. A method for manufacturing a highly stable open junction plastic-sealed silicon rectifier diode, comprising the steps of:

[0065] Step 1: Preparation of Diode Die

[0066] 1.1: Pre-cut in the thickness direction of the silicon wafer to form incompletely cut diode grains, and the cutting depth of the silicon wafer is 2 / of the total thickness of the silicon wafer.

[0067] 1.2: Put the pre-cut silicon wafer in the thickness direction N side down on the crystal cracking paper, with the cutting edge facing upward, and press lightly, so that the incompletely cut diode crystal grains are completely cracked to form a wafer.

[0068] Step 2: Tempering of Copper Lead Electrodes

[0069] Put the two copper lead electrodes into the welding boat and put them into the tunnel furnace for tempering;

[0070] There are five protective gas nozzles of the tunnel furnace, the first nozzle is set at the feed port of the tunnel furnace, the fifth nozzle is set at the dischar...

Embodiment 2

[0096] Example 2. A method for manufacturing a high-stability open-junction plastic-sealed silicon rectifier diode, characterized in that:

[0097] Including the following steps:

[0098] Step 1: Preparation of Diode Die

[0099] 1.1: Pre-cut in the thickness direction of the silicon wafer to form incompletely cut diode grains, and the cutting depth of the silicon wafer is 3 / 4 of the total thickness of the silicon wafer;

[0100] 1.2: Put the pre-cut silicon wafer in the thickness direction N side down on the crystal cracking paper, with the cutting edge facing upward, and press lightly, so that the incompletely cut diode crystal grains are completely cracked to form a wafer.

[0101] Step 2: Tempering of Copper Lead Electrodes

[0102] Put the two copper lead electrodes into the welding boat and put them into the tunnel furnace for tempering;

[0103] There are five protective gas nozzles of the tunnel furnace, the first nozzle is set at the feed port of the tunnel furnac...

Embodiment 3

[0128] Example 3. A method for manufacturing a highly stable open junction plastic-sealed silicon rectifier diode, comprising the steps of:

[0129] Step 1: Preparation of Diode Die

[0130] 1.1: Pre-cut in the thickness direction of the silicon wafer to form incompletely cut diode grains, and the cutting depth of the silicon wafer is 2 / 3 of the total thickness of the silicon wafer;

[0131] 1.2: Put the pre-cut silicon wafer in the thickness direction N side down on the crystal cracking paper, with the cutting edge facing upward, and press lightly, so that the incompletely cut diode crystal grains are completely cracked to form a wafer.

[0132] Step 2: Tempering of Copper Lead Electrodes

[0133] Put the two copper lead electrodes into the welding boat and put them into the tunnel furnace for tempering;

[0134] There are five protective gas nozzles of the tunnel furnace, the first nozzle is set at the feed port of the tunnel furnace, the fifth nozzle is set at the discha...

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Abstract

The invention discloses a manufacturing method of a high-stability open-junction plastic package silicon rectifier diode. The manufacturing method comprises the following steps: step 1, preparation of diode crystal grains; step 2, tempering of a copper lead electrode; step 3, filling; step 4, welding; step 5, cleaning; and step 6, plastic packaging. The diode produced through the method is small in pore area and high in yield, and the problem that welding is not dense and firm is effectively solved. According to the invention, the reliability of the produced diode is improved; and particularly, indexes such as reverse stable voltage resistance, stable low forward voltage drop, high-temperature leakage current, service life and the like of the diode are effectively improved.

Description

technical field [0001] The invention relates to the manufacture of semiconductor diodes, in particular to a method for manufacturing highly stable diodes. Background technique [0002] In addition, in the prior art, the upper and lower graphite boats must have considerable concentricity, and the concentricity of the upper and lower leads of materials welded with poor concentricity is difficult to guarantee. In this way, at least the following disadvantages will occur: A. Difficult, in serious cases, the material will be broken; when B is formed, the wafer will be subject to undue cutting stress (this stress will increase the IR and reduce the PIV), and in severe cases, the grains will break, especially for SKY and GPP devices. Since the front welding area of ​​these two types of devices is strictly limited, poor concentricity will not only cause the above-mentioned disadvantages, but also cause solder to overflow the welding area and cause short circuit or LP. There is no g...

Claims

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Application Information

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IPC IPC(8): H01L29/861H01L21/329H01L21/48H01L21/56
Inventor 李金栋李斌
Owner SHANDONG RONGCHUANG ELECTRONICS TECH CO LTD
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