Semiconductor devices and their manufacturing methods

Abstract

Semiconductor devices and their manufacturing methods are disclosed herein, and more particularly to semiconductor devices including a transistor having gate all around (GAA) transistor structures and manufacturing methods thereof. The methods described herein allow for complex shapes (e.g., "L-shaped") to be etched into a multi-layered stack to form fins used in the formation of active regions of the GAA nanostructure transistor structures. In some embodiments, the active regions may be formed with a first channel width and a first source / drain region having a first width and a second channel width and a second source / drain region having a second width that is less than the first width.

Description

technical field [0001] Embodiments of the present disclosure relate to the integration of horizontal all-around gate nanostructures for the design and operation of integrated circuits at the 3nm technology node or smaller. Background technique [0002] Semiconductor devices have been used in various electronic applications, such as personal computers, cell phones, digital cameras, and other electronic equipment. The manufacturing method of semiconductor devices usually deposits insulating or dielectric layers, conductive layers, and semiconductor layers on a semiconductor substrate in sequence, and uses lithography to pattern the various material layers to form circuit components and units on the semiconductor substrate. [0003] The semiconductor industry continues to reduce the minimum structure size to improve the density of various electronic components (such as transistors, diodes, resistors, capacitors, or the like) to integrate more components into a given area. Howe...

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Problems solved by technology

However, as the minimum structure size decreases, additional problems arise to be solved

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