Ramp generator and pixel column readout circuit

A technology of ramp generator and readout circuit, which is used in TV, electrical components, color TV, etc., can solve the problems of large chip difference, reduced conversion accuracy of image sensor, and impact on image quality of CMOS image sensor, and can eliminate offset voltage. , the effect of improving image quality

Active Publication Date: 2021-05-04
CHENGDU LIGHT COLLECTOR TECH
View PDF5 Cites 2 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The offset voltage seriously affects the image quality of the CMOS image sensor, resulting in the reduction of the conversion accuracy of the image sensor, and the difference between the chips between different processes is large

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Ramp generator and pixel column readout circuit
  • Ramp generator and pixel column readout circuit
  • Ramp generator and pixel column readout circuit

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0034] The specific implementation manner of the present invention will be described in more detail below with reference to schematic diagrams. The advantages and features of the present invention will be more apparent from the following description. It should be noted that all the drawings are in a very simplified form and use imprecise scales, and are only used to facilitate and clearly assist the purpose of illustrating the embodiments of the present invention.

[0035] Hereinafter, the terms "first", "second", etc. are used to distinguish between similar elements, and are not necessarily used to describe a specific order or chronological order. It is to be understood that these terms so used are interchangeable under appropriate circumstances. Similarly, if a method described herein includes a series of steps, the order in which these steps are presented is not necessarily the only order in which these steps can be performed, and some described steps may be omitted and / or...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention provides a ramp generator. The ramp generator comprises a first switch; an operational amplifier, wherein the first input end of the operational amplifier is connected with analog voltage through a first switch, the second input end of the operational amplifier is connected with reference voltage, the output end of the operational amplifier outputs ramp signals, the output end is connected to the first input end through a reset capacitor, and an offset voltage is generated at the first input end; a second switch which is connected with the reset capacitor in parallel; a third switch which is connected in series between a reset capacitor and the second switch; and a fourth switch which is connected in series between the reset capacitor and the reference voltage, wherein when the second switch and the fourth switch are both switched on and the first switch and the third switch are both switched off, the reset capacitor stores and eliminates the offset voltage. According to the pixel column reading circuit, the offset voltage in the ramp generator can be eliminated, so that the offset voltage of the pixel column reading circuit is eliminated, and the image quality of the CMOS image sensor is improved.

Description

technical field [0001] The invention relates to electronic circuit technology, in particular to a ramp generator and a pixel row readout circuit. Background technique [0002] With the continuous development of CMOS technology, the application range of CMOS image sensors is becoming more and more extensive because of its low power consumption, simple power supply, high integration, and low cost. CMOS image sensors are used to generate images representing objects. A CMOS image sensor includes rows and columns of pixels, and pixel row readout circuits and pixel column readout circuits. A pixel produces a small photoelectric signal proportional to the light reflected from the object to be imaged. The photoelectric signal is read and processed by signal processing circuitry to produce an image representative of the object. Pixels belonging to the same column are usually connected to a common output node from which signals are read out. Each pixel in the same bit line is cont...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): H04N5/3745H04N5/378
CPCH04N25/778H04N25/75
Inventor 高菊蔡化
Owner CHENGDU LIGHT COLLECTOR TECH
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products