Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Method for directly obtaining oxygen potential and structure of material interface

An interface and oxygen potential technology, which is applied in analytical materials, computer materials science, and material analysis using wave/particle radiation. , the effect of strong portability

Active Publication Date: 2021-05-07
UNIV OF SCI & TECH BEIJING
View PDF3 Cites 4 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

This method proposes a method to directly measure the distribution and valence of elements on the surface and interface, and obtain the interface oxygen potential and interface structure based on multivariate thermodynamic calculations, which solves the problem that the interface oxygen potential and interface structure are difficult to obtain directly.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method for directly obtaining oxygen potential and structure of material interface
  • Method for directly obtaining oxygen potential and structure of material interface
  • Method for directly obtaining oxygen potential and structure of material interface

Examples

Experimental program
Comparison scheme
Effect test

Embodiment

[0073] For Cr 2 o 3 Add to CaO-MgO-SiO 2 -Al 2 o 3 The influence of the slag system, the composition of the slag system is shown in Table 1, using the gas slag balance method, quenching at a temperature of 1873K, using X-ray photoelectron spectroscopy and etching technology to etch and quantify the surface, through quantitative and fitting The analysis method determines the distribution state of Cr, O and other elements at the interface, and combines the multivariate thermodynamic equilibrium calculation to obtain the interface oxygen potential and interface structure changes. In order to reflect the steps more clearly, the specific process is as follows figure 2 .

[0074] Table 1 slag composition table

[0075]

[0076] Step 1: Quenched CaO-MgO-SiO 2 -Al 2 o 3 And containing Cr 2 o 3 -CaO-MgO-SiO 2 -Al 2 o 3 The slag is processed, and the length, width and thickness do not exceed 5*5*3mm. Under the condition of ensuring that the interface is not contaminat...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
sizeaaaaaaaaaa
Login to View More

Abstract

The invention discloses a method for directly obtaining oxygen potential and structure of a material interface, and belongs to the technical field of material interface research. The method comprises the following steps of: etching the surface of a fresh solid sample to form a to-be-detected sample interface; carrying out XPS detection on the to-be-detected sample interface by using an Al K alpha or Mg K alpha X-ray to obtain an X-ray photoelectron spectroscopy full spectrum and a target element high-resolution spectrum; according to full-spectrum quantification and high-resolution spectrogram fitting processing, obtaining element quantitative information and valence state distribution information of the to-be-detected sample interface; performing multivariate thermodynamic calculation according to the element quantitative information of the interface to obtain the interface oxygen potential of the to-be-detected sample interface; obtaining the structure information of the to-be-detected sample interface according to the valence state distribution information; and according to the etching information, obtaining structure changes of different depths. The method solves the problem that the interface oxygen potential and the interface structure are difficult to directly obtain.

Description

technical field [0001] The invention belongs to the technical field of material interface research, and relates to a method for directly obtaining the oxygen potential and structure of a material interface, especially for the surface interface of metal materials, catalytic materials and coatings. Background technique [0002] The surface, interface and internal body of the material have obvious differences in structure and chemical composition. Since the internal atoms are surrounded by atoms, the force field it receives is balanced, but for the interface atoms, the force field received is unbalanced. , the material surface generates surface energy. The material surface and interface have a great influence on the overall performance of the material, and some even directly determine the performance of the material. The physical and chemical interaction at the surface / interface of material layers is a key issue in solving the service life of materials. The current material p...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): G01N23/2273G16C60/00
CPCG01N23/2273G16C60/00G01N2223/085G01N2223/1016G01N2223/401
Inventor 王丽君何晓波薛未华周国治
Owner UNIV OF SCI & TECH BEIJING
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com