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Pixel structure and image sensor

A technology of image sensor and pixel structure, applied in the field of pixel structure and image sensor, can solve the problem of dim imaging

Pending Publication Date: 2021-05-14
HUAWEI TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] The present application provides a pixel structure and an image sensor, which can improve the photoelectric conversion efficiency under low-light conditions, thereby solving the problem of dim imaging under low-light conditions

Method used

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  • Pixel structure and image sensor
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  • Pixel structure and image sensor

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Embodiment Construction

[0037] The technical solutions in the embodiments of the present invention will be described below with reference to the accompanying drawings.

[0038] In order to facilitate the understanding of the embodiments of the present application, several terms involved in the present application are briefly described first.

[0039] 1. Pixel

[0040] The smallest photosensitive unit on the image sensor of a mobile phone camera.

[0041] 2. Diode

[0042] Among electronic components, a device with two electrodes that only allows current to flow in one direction, many uses are for its rectification function.

[0043] 3. Analog-to-digital converter

[0044] Usually refers to an electronic component that converts an analog signal into a digital signal. A common analog-to-digital converter converts an input voltage signal into an output digital signal. Since the digital signal itself has no practical significance, it only represents a relative size. Therefore, any analog-to-digital...

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Abstract

The invention provides a pixel structure and an image sensor, which can improve the photoelectric conversion efficiency under the condition of weak light, thereby solving the problem of dim imaging under the condition of weak light. The pixel structure comprises a metal bottom plate; a substrate unit positioned on the metal bottom plate; a nanometer antenna unit located on the substrate unit, wherein the nanometer antenna unit comprises one or more nanometer antennas, each nanometer antenna in the one or more nanometer antennas corresponds to one optical wave band, each nanometer antenna comprises M parts, and nanometer gaps are formed among the M parts, a metal-insulator-metal diode is formed at the nanometer gap, wherein M is a multiple of 2; and a packaging unit covered on the nanometer antenna unit. The image sensor is composed of a plurality of pixel structures.

Description

technical field [0001] The present application relates to the field of electronic technology, and in particular to a pixel structure and an image sensor. Background technique [0002] Image sensors, which convert light signals into electrical signals, are one of the core parts of mobile phone cameras. The image sensors currently used in the market mainly include charge coupled device (CCD) image sensors and complementary metal oxide semiconductor (complementary metal oxide semiconductor, CMOS) image sensors, both of which essentially utilize the particle properties of light , allowing photons to excite free electrons in the semiconductor, thereby generating an electrical signal. Under low-light conditions, there are few photons that can be captured by the camera, which makes the electrical signal generated by taking pictures at night weak, and the photos taken by mobile phones at night appear dim. Contents of the invention [0003] The present application provides a pixe...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L23/66H01L27/146H01Q1/22H01Q1/24H01Q1/38H01Q13/10H01Q21/30
CPCH01L27/14605H01L27/14609H01L23/66H01Q1/38H01Q13/106H01Q21/30H01Q1/22H01Q1/2266H01Q1/243H01L27/14603H01L27/1469H01L27/14625H01L31/102
Inventor 杨亮刘永俊杨晖
Owner HUAWEI TECH CO LTD