A heat-setting process for pei film capacitors
A film capacitor, heat setting technology, applied in the direction of film/thick film capacitors, wire wound capacitors, multilayer capacitors, etc., can solve the problem that it is difficult to find out the heat setting temperature parameters and heat setting time parameters, etc., to improve reliable work. Effects of temperature, high insulation resistance, and low loss
Active Publication Date: 2022-08-09
艾华新动力电容(苏州)有限公司
View PDF0 Cites 0 Cited by
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
PEI film capacitors can meet the application requirements of the new generation of switching devices, but it is difficult to find out the heat setting temperature parameters and heat setting time parameters that can meet the PEI material
Method used
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View moreImage
Smart Image Click on the blue labels to locate them in the text.
Smart ImageViewing Examples
Examples
Experimental program
Comparison scheme
Effect test
Embodiment Construction
[0015] The present invention will be further described below with reference to the accompanying drawings and specific embodiments, so that those skilled in the art can better understand the present invention and implement it, but the embodiments are not intended to limit the present invention.
[0016] like figure 1 A PEI film capacitor is shown, including a core 1 , a gold spray layer 2 , an epoxy resin 3 , a lead 4 and a plastic case 5 . Both ends of the core 1 are provided with a gold-sprayed layer 2, and a lead 4 is welded on the gold-sprayed layer 2. The plastic shell 5 wraps the entire core 1 with the gold-sprayed layer 2, and epoxy is filled between the core 1 and the plastic shell 5. Resin 3.
[0017] The core 1 is formed by winding two layers of metallized PEI films 61 . The PEI films 61 are provided with vapor-deposited metal 62 , and the vapor-deposited metal 62 is zinc, aluminum, or silver-zinc-aluminum alloy. The gold spraying layer 2 is formed by spraying zinc ...
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More PUM
| Property | Measurement | Unit |
|---|---|---|
| electrical resistance | aaaaa | aaaaa |
| electrical resistance | aaaaa | aaaaa |
Login to View More
Abstract
The invention discloses a heat-setting process for a PEI film capacitor. The PEI film capacitor includes a core, and the core heat-setting method is as follows: placing the core in an oven, and raising the temperature in the oven from room temperature to 60 °C in 28-32 minutes. ±3°C, keep the core at 60±3°C for 58-62 minutes; then raise the temperature in the oven from 60±3°C to 90±3°C over 28-32 minutes, so that the core is at a temperature of Hold at 90±3°C for 58-62 minutes; then make the temperature in the oven rise from 90±3°C to 120±3°C over 28-32 minutes, and keep the core at 120±3°C for 230-250 minutes; Then the temperature in the oven was raised from 120±3°C to 150±3°C over 28-32 minutes, the core was kept at 150±3°C for 470-490 minutes, and finally the core was placed in the oven using the oven The fan is naturally cooled to room temperature. In the heat-setting process of the PEI film capacitor of the present invention, appropriate heat-setting parameters are selected according to the characteristic parameters of the PEI film, so that the electrical performance of the capacitor is more stable.
Description
technical field [0001] The invention relates to the technical field of power electronic devices, in particular to a preparation process of a PEI (Polyetherimide, polyetherimide) film capacitor. Background technique [0002] Wide-bandgap semiconductor materials generally have much higher critical avalanche breakdown electric field strength, carrier saturation drift velocity, higher thermal conductivity and similar carrier mobility than silicon. Therefore, power electronic devices based on wide-bandgap semiconductor materials such as silicon carbide will have a much higher high-voltage withstand capability, much lower on-state resistance, better thermal conductivity and thermal stability than silicon devices As well as greater resistance to high temperature and radiation, and relative to silicon devices, the performance of wide-bandgap semiconductor materials is orders of magnitude improved in many aspects. [0003] With the development of switching devices, the application e...
Claims
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More Application Information
Patent Timeline
Login to View More Patent Type & Authority Patents(China)
IPC IPC(8): H01G4/33H01G4/32
CPCH01G4/33H01G4/32
Inventor 谢平李嘉雄王亚民
Owner 艾华新动力电容(苏州)有限公司