Unlock instant, AI-driven research and patent intelligence for your innovation.

Vacuum-semiconductor solid state two-stage thermionic power generation device

A technology for power generation devices and semiconductors, applied in generators/motors, generators that convert kinetic energy into electrical energy, electrical components, etc., can solve problems such as low work function, difficulty, high melting point, etc., so as to reduce the failure rate and achieve recovery. And the effect of utilizing and lowering the barrier height

Active Publication Date: 2022-07-01
NAVAL UNIV OF ENG PLA
View PDF8 Cites 1 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

High-efficiency thermionic power generation devices require electrode materials with low work function and high melting point. However, it is difficult for current electrode materials to achieve these two indicators at the same time, which also limits the wide application of thermionic power generation devices.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Vacuum-semiconductor solid state two-stage thermionic power generation device
  • Vacuum-semiconductor solid state two-stage thermionic power generation device
  • Vacuum-semiconductor solid state two-stage thermionic power generation device

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0031] The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only a part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those of ordinary skill in the art without creative efforts shall fall within the protection scope of the present invention.

[0032] It should be noted that all directional indications (such as up, down, left, right, front, back...) in the embodiments of the present invention are only used to explain the relationship between various components under a certain posture (as shown in the accompanying drawings). The relative positional relationship, the movement situation, etc., if the specific posture changes, the directional indication also changes accordingly.

[...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The present invention provides a vacuum-semiconductor solid-state two-stage thermionic power generation device, comprising a light concentrating module, a high temperature thermionic power generation module, a low temperature thermionic power generation module and a heat dissipation module; the light concentrating module collects and absorbs heat energy from sunlight; The ion power generation module is a vacuum thermionic power generation module, which converts the thermal energy from the absorber into electrical energy; the low temperature thermionic power generation module is a semiconductor solid-state thermionic power generation module based on van der Waals heterojunction, which makes the high temperature thermionic power generation module unavailable. The waste heat is converted into electricity. The two-stage thermionic device of the present invention adopts the design method of high and low temperature two-stage energy recovery, realizes the gradient utilization of energy, and realizes higher overall photoelectric conversion efficiency.

Description

technical field [0001] The invention relates to the technical field of solar energy utilization and semiconductor solid-state thermo-electric conversion, in particular to a solid-state two-stage thermionic power generation device. Background technique [0002] Solar energy is an important renewable energy source and plays an important role in my country's energy strategy. The main methods of solar power generation are mainly divided into two types, namely solar thermal power generation and photovoltaic power generation. The former uses solar energy to heat the working medium, converts light energy into thermal energy of the working medium, and drives machinery such as steam turbines and Stirlings to do work; the latter uses sunlight to illuminate the p-n nodes in photovoltaic materials to generate photogenerated carriers. , the photogenerated carriers can be collected to drive the load of the external circuit. In addition, the thermionic generator can also be applied to ph...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H02N3/00
CPCH02N3/00
Inventor 丁泽民邱肃肃陈林根余又红孟凡凯谢志辉
Owner NAVAL UNIV OF ENG PLA
Features
  • R&D
  • Intellectual Property
  • Life Sciences
  • Materials
  • Tech Scout
Why Patsnap Eureka
  • Unparalleled Data Quality
  • Higher Quality Content
  • 60% Fewer Hallucinations
Social media
Patsnap Eureka Blog
Learn More