Silicon carbide substrate etching jig

Abstract

The invention discloses a silicon carbide substrate etching jig, and relates to the technical field of silicon carbide production. The silicon carbide substrate etching jig comprises a plurality of accommodating discs and a rotating shaft, and the accommodating disc is used for accommodating a silicon carbide substrate. The multiple accommodating discs are arranged in a stacked mode, the rotating shaft is rotationally connected with the multiple accommodating discs, and any accommodating disc can independently rotate around the rotating shaft. The silicon carbide substrate etching jig can protect the silicon carbide substrate and reduce the probability that the silicon carbide substrate is collided, and is high in etching efficiency and good in etching effect.

Description

technical field [0001] The invention relates to the technical field of silicon carbide production, in particular to a silicon carbide substrate etching fixture. Background technique [0002] The processing of SiC silicon carbide substrates includes processes such as wire cutting, chamfering, grinding, polishing and cleaning of ingots, and then to epitaxy and chip processes. However, in order to ensure the processing efficiency of the entire process, the quality of the silicon carbide substrate is particularly important. The quality of the silicon carbide substrate directly affects the pass rate of grinding and polishing, and even affects the pass rate of the chip end. The current method for testing the quality of silicon carbide substrates is to etch the silicon carbide substrates in a high-temperature KOH solution to characterize the defects of the silicon carbide substrates, and then observe them through a microscope to judge the quality of the silicon carbide substrates ...

AI Technical Summary

Problems solved by technology

[0003] However, in the process of etching with the existing silicon carbide substrate etching fixture, the fixture is easy to collide with the silicon carbide substrate and cause fragments

In addition, for multiple different ingots after wire cutting, sometimes multiple silicon carbide substrates need to be etched, but the existing jig can only etch one piece, resulting in low etching efficiency and wasting time and manpower

Moreover, different silicon carbide substrates will have different etching times in single-chip etching, resulting in different defects in silicon carbide substrates, which is not conducive to the observation of defects.

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