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Memory control method and device and ferroelectric memory

A technology of ferroelectric memory and control method, which is applied in the field of memory and can solve problems such as limiting the operating speed of the system

Active Publication Date: 2021-06-01
INST OF MICROELECTRONICS CHINESE ACAD OF SCI
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0003] The current mainstream computer architecture is based on the Von Neumann architecture, which physically separates the storage module and the computing module, and requires data transmission between the processor and the memory through the bus. There is a large difference between the speed and the computing speed of the computing module, which greatly limits the overall operating speed of the system, which is the problem of the so-called memory wall

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  • Memory control method and device and ferroelectric memory
  • Memory control method and device and ferroelectric memory
  • Memory control method and device and ferroelectric memory

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Embodiment Construction

[0032] Hereinafter, embodiments of the present disclosure will be described with reference to the drawings. It should be understood, however, that these descriptions are exemplary only, and are not intended to limit the scope of the present disclosure. Also, in the following description, descriptions of well-known structures and techniques are omitted to avoid unnecessarily obscuring the concepts of the present disclosure. Various structural schematic diagrams according to embodiments of the present disclosure are shown in the accompanying drawings. The figures are not drawn to scale, with certain details exaggerated and possibly omitted for clarity of presentation.

[0033] In the context of the present disclosure, relational terms such as first and second, etc., are only used to distinguish one entity or operation from another, and do not necessarily require or imply that there is a relationship between these entities or operations. Any such actual relationship or sequence...

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Abstract

The invention discloses a memory control method and device and a ferroelectric memory, and the method comprises the steps: firstly applying a first voltage to a plate line of a target memory unit in the ferroelectric memory, so as to impact out a part of charges in a ferroelectric capacitor in the target memory unit; and after target operation processing is carried out based on the impacted charges, applying a second voltage higher than the first voltage to the board line of the target storage unit, reading the data stored in the target storage unit again, and writing the read data into the target storage unit again, so that the recovery of the storage unit after the data is read can be realized. The data stored in the storage unit does not need to be copied before calculation, so that the calculation speed of the storage and calculation integrated ferroelectric memory is improved, and the calculation power consumption is reduced.

Description

technical field [0001] The invention relates to the technical field of memory, in particular to a memory control method, device and ferroelectric memory. Background technique [0002] As a new type of memory, ferroelectric capacitors have the advantages of high-speed reading and writing, low power consumption, long service life, non-volatile storage, and good anti-radiation characteristics, and have broad application prospects. [0003] The current mainstream computer architecture is based on the Von Neumann architecture, which physically separates the storage module and the computing module, and requires data transmission between the processor and the memory through the bus. There is a large difference between the speed and the computing speed of the computing module, which greatly limits the overall operating speed of the system, which is the problem of the so-called memory wall. In order to solve the von Neumann structure problem, a memory capable of integrating storage ...

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G11C11/22
CPCG11C11/2273G11C11/2275G11C11/2255G11C11/221Y02D10/00
Inventor 杨建国赵昱霖
Owner INST OF MICROELECTRONICS CHINESE ACAD OF SCI
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