Broadband power transistor devices and amplifiers with output t-match and harmonic termination circuits and methods of manufacture thereof
A technology for terminating circuits, power dividers, used in amplifiers with semiconductor devices/discharge tubes, amplifiers, high-frequency amplifiers, etc.
Pending Publication Date: 2021-06-11
NXP USA INC
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However, power amplifier device designers continue to face challenges in achieving these goals
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[0047] An embodiment of a radio frequency (RF) amplifier having a first amplification path, the radio frequency (RF) amplifier comprising a transistor die having a transistor and a transistor output, and having a transistor die coupled between the transistor output and an output of the first amplification path. The impedance matching circuit on the output side of the T-type matching circuit topology. The output-side impedance matching circuit includes a first inductance element connected between the transistor output terminal and the quasi-RF cold-spot node, a second inductance element connected between the quasi-RF cold-spot node and the output of the first amplification path, and a second inductance element connected between A first capacitor between the quasi-RF cold-spot node and the ground reference node. The RF amplifier also includes a baseband termination circuit connected to a quasi-RF cold-spot node. The baseband termination circuit includes a plurality of component...
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Embodiments of RF amplifiers and packaged RF amplifier devices each include an amplification path with a transistor die, and an output-side impedance matching circuit having a T-match circuit topology. The output-side impedance matching circuit includes a first inductive element (e.g., first wirebonds) connected between the transistor output terminal and a quasi RF cold point node, a second inductive element (e.g., second wirebonds) connected between the quasi RF cold point node and an output of the amplification path, and a first capacitance connected between the quasi RF cold point node and a ground reference node. The RF amplifiers and devices also include a baseband termination circuit connected to the quasi RF cold point node, which includes an envelope resistor, an envelope inductor, and an envelope capacitor coupled in series between the quasi RF cold point node and the ground reference node.
Description
technical field [0001] Embodiments of the subject matter described herein relate generally to radio frequency (RF) amplifiers, and more particularly, to broadband power transistor devices and amplifiers and methods of fabricating such devices and amplifiers. Background technique [0002] Wireless communication systems employ power amplifiers to increase the power of radio frequency (RF) signals. For example, in a cellular base station, a Doherty power amplifier may form part of the final amplification stage in the transmission chain before providing the amplified signal to an antenna for radiation over the air interface. In such wireless communication systems, desirable characteristics of power amplifiers are high gain, high linearity, stability, and high levels of power adding efficiency. [0003] In the field of power amplifier device design, it is increasingly desirable to achieve concurrent multi-band, broadband amplification. For example, in order to successfully desi...
Claims
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IPC IPC(8): H03F3/189
CPCH03F3/189H03F1/0288H03F1/565H03F3/195H03F2200/222H03F2200/387H03F2200/451H01L2223/6655H01L23/66H03F3/213H03F3/245H01L2223/6611H01L24/49H01L2224/49175H01L2224/48247H01L2224/0603H01L2224/49111H01L2224/48137H01L2924/19105H01L2224/48091H01L2924/00014H01L2224/48195H01L2924/19011H01L24/48H01L24/73H01L2224/73265H01L2224/32245H01L2224/45099H01L2924/00H01L29/2003H03F3/193H03F3/211H03F2200/318H04B1/04H04B2001/045
Inventor J·S·罗伯茨朱宁O·勒姆比耶D·G·霍尔梅斯J·K·琼斯
Owner NXP USA INC