OPC method

Abstract

The invention discloses an OPC method. The method comprises the following steps: 1, establishing a plurality of OPC models with different precisions; 2, providing a target layout needing to be subjected to OPC; 3, selecting an OPC model with the lowest precision to carry out multiple OPC operations on the target layout, and forming a corresponding OPC intermediate layer; 4, selecting an OPC model with higher precision to carry out multiple OPC operations on the OPC intermediate layer formed by the OPC model with the previous precision, and forming a corresponding OPC intermediate layer; 5, repeating step 4 until the OPC intermediate layer corresponding to the OPC model with second high precision is formed; and 6, selecting the OPC model with the highest precision to perform multiple OPC operations on the OPC intermediate layer corresponding to the OPC model with the second highest precision to form a final OPC result. The total OPC operation time can be reduced under the condition that the correction precision is ensured.

Description

technical field [0001] The invention relates to a semiconductor integrated circuit manufacturing method, in particular to an optical proximity correction (Optical Proximity Correction, OPC) method. Background technique [0002] In the photolithography process, the pattern structure corresponding to the layout on the reticle (Mask) will be projected into the photoresist through the exposure system and form the corresponding pattern structure in the photoresist, but due to the optical The reason or the chemical reaction of the photoresist, there is a deviation between the pattern structure formed in the photoresist and the pattern structure on the mask plate. This deviation needs to be modified in advance on the pattern structure on the mask plate through OPC correction. When the OPC-corrected mask is exposed, the pattern structure formed in the photoresist will be consistent with the designed pattern structure and meet the production requirements of the process. [0003] OPC...

AI Technical Summary

Problems solved by technology

[0011] In step three, due to the complexity of the parameters of the high-precision OPC model, while the OPC model obtains high precision, the amount of OPC calculations will increase significantly, and as the size of the graphics shrinks, the number of graphics per unit area will increase exponentially. The time has almost doubled, which poses a serious challenge not only to the amount of CPU computing resources, but also to whether the reticle can be published on time

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