Processing method of semiconductor structure and semiconductor structure
A processing method and semiconductor technology, which can be used in the manufacture of semiconductor/solid-state devices, electrical components, circuits, etc., and can solve problems such as easy fracture of metal layers
Active Publication Date: 2021-06-18
度亘激光技术(苏州)有限公司
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Problems solved by technology
[0003] The object of the present invention is to provide a semiconductor structure processing method and a semiconductor structure to alleviate the problem in the prior art that the etched silicon nitride surface has a sharp step corner, which causes the evaporated metal layer to be easily formed at the step. broken technical issues
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[0040] The technical solutions of the present invention will be clearly and completely described below in conjunction with the embodiments. Obviously, the described embodiments are part of the embodiments of the present invention, but not all of them. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the protection scope of the present invention.
[0041]In the description of the present invention, it should be noted that if the terms "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inner", "outer" appear ", etc., the orientation or positional relationship indicated is based on the orientation or positional relationship shown in the drawings, which is only for the convenience of describing the present invention and simplifying the description, rather than indicating or implying that the referred device or element must have a specific orientati...
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Abstract
The invention belongs to the technical field of semiconductor structure preparation processes and relates to a processing method of a semiconductor structure and a semiconductor structure. The processing method comprises the following steps that: a photoresist layer is formed on a stacking structure on which a silicon nitride layer is deposited; a first light source and a second light source are arranged above a mask plate, the first light source exposes the photoresist layer at a first entering angle, and the second light source exposes the photoresist layer at a second entering angle; developing is performed to form a dovetail groove; plasma etching is carried out on the silicon nitride layer with the notch of the dovetail groove taken as a mask; first plasma treatment is performed on the photoresist layer, and plasma etching is performed on the silicon nitride layer outside the photoresist layer with the residual photoresist layer taken as a mask so as to form a first step structure at the opening of the silicon nitride layer; (N + 1) th treatment is carried out on the residual photoresist layer after the Nth plasma treatment, so that an (N + 1) th step structure is formed at the opening of the silicon nitride layer; and a metal layer is formed on the surface of the silicon nitride layer with the plurality of steps and is not easy to break.
Description
technical field [0001] The invention relates to the technical field of semiconductor structure preparation technology, in particular to a semiconductor structure processing method and the semiconductor structure. Background technique [0002] At present, in the formation process of semiconductor structures, a silicon nitride (SiNx) film is usually formed on a stacked structure such as gallium arsenide / aluminum gallium arsenide (GaAs / AlGaAs), and a dry etching process is used to form a groove on the surface of silicon nitride. groove, and then vapor-deposit a metal layer on the etched silicon nitride surface. Since the etched silicon nitride surface has sharp step corners, the vapor-deposited metal layer is easily broken at the step. Contents of the invention [0003] The object of the present invention is to provide a semiconductor structure processing method and a semiconductor structure to alleviate the problem in the prior art that the etched silicon nitride surface has...
Claims
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Patent Timeline
Login to View More IPC IPC(8): H01L21/306H01L21/321H01L21/3213H01L21/02
CPCH01L21/02458H01L21/30604H01L21/3065H01L21/3211H01L21/32134H01L21/32136
Inventor 白龙刚惠利省于良成浦栋张松涛杨国文
Owner 度亘激光技术(苏州)有限公司