Defect characterization method and device
A defect characterization and defect technology, which is applied in the field of defect characterization methods and devices, can solve the problems of reducing semiconductor yield and failing to obtain semiconductor defect images, and achieve the effect of improving yield
Active Publication Date: 2021-06-22
CHANGXIN MEMORY TECH INC
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Problems solved by technology
[0005] This application provides a defect characterization method and device to solve the problem that the existing technology cannot obtain defect images of specific defects in semiconductors and reduce the yield of semiconductors
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[0053] Exemplary embodiments will be described in detail herein, examples of which are illustrated in the accompanying drawings. Where the following description refers to the drawings, the same numerals in different drawings refer to the same or similar elements unless otherwise indicated. The implementations described in the illustrative examples below are not intended to represent all implementations consistent with this disclosure. Rather, they are merely examples of apparatus and methods consistent with some aspects of the present disclosure as recited in the appended claims.
[0054] With the miniaturization of semiconductors, more and more defects are generated in the semiconductor manufacturing process, and the defects are generally detected by a scanning electron microscope (Scanning Electric Microscope, SEM for short). In the prior art, semiconductor defects are generally detected through automatic defect review (ADR), and the detected defects are classified. That i...
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The invention provides a defect characterization method and device. The defect characterization method comprises the following steps: acquiring a first scanning image and a target defect coordinate in the first scanning image; acquiring a first defect image according to the target defect coordinate in the first scanning image, wherein the first defect image comprises a defect area where a target defect is located and a noise area which does not comprise the target defect; marking the noise area, performing ADR calculation on the defect area, and obtaining a pixel grade value of a defect in the defect area; obtaining the coordinate of the defect with the maximum pixel grade value, and obtaining a second defect image according to the coordinate of the defect with the maximum pixel grade value; and classifying the defect with the maximum pixel grade value according to the second defect image. According to the invention, the problem that the defect image of the specific defect of the semiconductor cannot be acquired and the yield of the semiconductor is reduced in the prior art can be solved.
Description
technical field [0001] The present application relates to semiconductor fabrication technology, and in particular, to a defect characterization method and device. Background technique [0002] In order to secure a high yield in semiconductor manufacturing, it is important to detect early defects that occur in the manufacturing process and take countermeasures. In recent years, with the miniaturization of semiconductors, the defects generated in the manufacturing process are more and more and more and more fine, so the scanning electron microscope (Scanning Electric Microscope, SEM) is introduced to detect the defects, and the detected defects Defect images are presented to the staff. [0003] In the prior art, semiconductor defects are generally detected through automatic defect review (ADR), and the detected defects are classified. Specifically, the SEM scans the semiconductor surface to obtain a scanned image, the scanning machine determines the defect coordinates accord...
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Login to View More IPC IPC(8): G06T7/00G06T7/73G06K9/62G01N21/88G01N23/2251
CPCG06T7/0004G06T7/73G01N21/8851G01N23/2251G01N2021/8887G06T2207/10061G06T2207/30148G06T2207/20132G06T2207/10056G06F18/24
Inventor 黄宁
Owner CHANGXIN MEMORY TECH INC