Ultra-high voltage insulation isolation igbt half-bridge gate drive circuit

Abstract

The invention relates to an ultra-high voltage insulation isolation IGBT half-bridge gate drive circuit required for gate drive of high-voltage IGBT devices. The circuit includes an input receiving circuit, a dead time generating circuit, a low-side delay circuit, and a low-side output drive circuit. , Modulation transmission circuit, 4 high-voltage capacitors, high common mode transient suppression differential signal receiving circuit, high-side output drive circuit, low-voltage generating circuit at the transmitting end and low-voltage generating circuit at the receiving end. The ultra-high-voltage insulation and isolation SiC MOSFET gate drive circuit provided by the present invention, on the one hand, adopts high-voltage isolation technology to realize ultra-high withstand voltage insulation capacitance; on the other hand, it can automatically detect the magnitude of the ground potential common-mode transient noise, And when the noise exceeds the threshold, the error generated by the common mode transient noise is dynamically compensated. The invention can be widely used in driving various high-voltage power devices.

Description

technical field [0001] The invention relates to an ultra-high voltage insulation isolation IGBT half-bridge gate drive circuit for a power electronic system, belonging to the technical field of integrated circuits. Background technique [0002] In the 21st century, driven by emerging industries such as smart grids, mobile communications, and new energy vehicles, power electronics application systems require further improvement of system efficiency, miniaturization, and increased functionality, especially requiring circuit applications in terms of size, quality, power, and efficiency. trade-offs, such as server power management, battery chargers, and microinverters for solar farms. The above applications require the power electronic system to have high power density (>500W / in 3 , namely 30.5W / cm 3 ), high specific power (10kW / lb, 22kW / kg) and high total load point (>1000W). With the continuous development and improvement of semiconductor technology and manufacturing ...

AI Technical Summary

Problems solved by technology

The size of VH directly determines the electrical isolation level inside the chip, and to realize different levels of electrical isolation functional modules inside the chip, there are large differences in the circuit device technology and cost quality level required.

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