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Gating device based on aluminum-doped niobium oxide and preparation method thereof

A gating device, a technology of niobium oxide, applied in the field of information storage, can solve the problems of low gating and large leakage current of the gating tube, and achieve the effects of improving voltage consistency, high gating ratio, and increasing high-resistance state resistance

Active Publication Date: 2021-07-16
HUBEI UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

This transition process is driven by voltage or temperature, so the leakage current is larger, but the stability and tolerance are better, but the gating ratio of the gating tube is low

Method used

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  • Gating device based on aluminum-doped niobium oxide and preparation method thereof
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  • Gating device based on aluminum-doped niobium oxide and preparation method thereof

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preparation example Construction

[0046] Based on the same inventive concept, the present invention also provides a method of preparation of a gallstream-based striking device, including the following steps:

[0047] S1, provide a bottom electrode;

[0048] S2, the transition layer is prepared on the surface of the bottom electrode;

[0049] S3, the top electrode is prepared from the surface of the bottom electrode side by the transition layer;

[0050] Among them, the material of the transition layer is an aluminum doped oxide film, and the aluminum doped molar percent m, 0.1% ≤ m <1.5% in the transition layer.

[0051] In some embodiments, the preparation method of the transition layer is specifically: prepared by cerium oxide, aluminum oxide as a target, and prepared a transition layer using a magnetron sputtering method, wherein the magnetron sputtering device is controlled at the time of magnetron sputtering. The pressure in the vacuum is 2 × 10 -1 ~ 6 × 10 -1 PA, the temperature is 290 ~ 330K, the sputtering...

Embodiment 1

[0057] The present application provides a method of preparing a gating device based on aluminum doped oxide, comprising the steps of:

[0058] S1 provides a silicon substrate with a PT bottom electrode;

[0059] S2, in the magnetron sputtering apparatus, the alumina target, the alumina target, and the vacuum chamber of the magnetron sputtering apparatus in argon is an inert gas, and the system pressure in the vacuum chamber is 4.1 × 10 -1 PA, the temperature is 300K, the sputtering power of the cerium oxide is 55 W, the alumina target sputtering power is 5W, and the sputtering time is 40 min, that is, deposition on the PT bottom electrode to obtain a conversion layer aluminum-doped oxide film, After the deposition is completed, the thickness of the aluminum doped oxide film is about 90 nm;

[0060] S3, a titanium target is mounted in a magnetron sputtering apparatus, and the vacuum chamber of the magnetron sputtering apparatus is accessed by argon gas, and the system pressure in t...

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Abstract

The invention provides a gating device based on aluminum-doped niobium oxide and a preparation method thereof. The gating device comprises a bottom electrode; a conversion layer positioned on one side surface of the bottom electrode; and a top electrode located on one side surface, away from the bottom electrode, of the conversion layer; wherein the transition layer is made of an aluminum-doped niobium oxide film, the molar percentage of aluminum doping in the transition layer is m, and m is larger than or equal to 0.1% and smaller than 1.5%. According to the gating device based on the aluminum-doped niobium oxide, the conversion layer is the aluminum-doped niobium oxide thin film, the barrier of the high-resistance state of niobium oxide is improved through aluminum doping, the high-resistance state resistance is increased, and compared with a traditional gating tube with the conversion layer being niobium oxide, the gating device has the higher gating ratio.

Description

Technical field [0001] The present invention relates to the field of information storage, and more particularly to a strobe device based on aluminum doped oxide and its preparation method thereof. Background technique [0002] In recent years, with the continuous development of electronics, the market needs to be higher and higher in non-volatile memory. During the segmentation of the device, the process of photolithography, etching is gradually approaching its physical limit, and the traditional non-volatile memory is also facing technical bottlenecks in operational voltage, reliability, power consumption. [0003] The new type of change (RRAM) memory acts as an emerging nonvolatile memory device, which has extensive attention due to its excellent characteristics such as fast, well-tolerant, 3D storage potential and CMOS process compatibility. To achieve higher storage density, the minimum feature area is generally used when the RRAM device array is integrated (4F 2 The cross cr...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L45/00
CPCH10N70/026H10N70/011H10N70/8833
Inventor 马国坤桃李万厚钊段金霞饶毅恒董文静刘能帆陈傲王浩
Owner HUBEI UNIV
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