Method for accelerating plasma nitriding with assistance of rare earth compound

A technology of rare earth compounds and plasma, applied in metal material coating process, coating, solid-state diffusion coating, etc., can solve the problems of nitride layer grain growth, reduce production efficiency, increase energy consumption, etc., and achieve hardness Improve and reduce nitriding cost and energy consumption, and improve the effect of bearing capacity

Pending Publication Date: 2021-07-20
ANHUI UNIVERSITY OF TECHNOLOGY
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The purpose of the present invention is to solve the problem of increasing the nitrided layer grain growth, increasing energy consumpti

Method used

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  • Method for accelerating plasma nitriding with assistance of rare earth compound
  • Method for accelerating plasma nitriding with assistance of rare earth compound
  • Method for accelerating plasma nitriding with assistance of rare earth compound

Examples

Experimental program
Comparison scheme
Effect test

Example Embodiment

[0023] Example 1

[0024] Step 1: Wash 38CrMoal steel samples with sandpaper and further polish to the mirror state, washed clean in acetone or alcohol solution;

[0025] Step 2: Weigh LA (NO 3 ) 3 · 6h 2 O (99.99%, 0.02mol), Fe (NO 3 ) 3 · 9h 2 O (98.5%, 0.02 mol) causes the molar ratio of the lanthanum ion and iron ions to 1: 1, and the main salt is dissolved in 50 ml of distilled water, and excess of citric acid (10g) is added and stirred for two hours to make iron ions and lanthanum. The ion is fully complexed, and the transparent rare earth compound is formed after 48 h. Lafeo 3 Precursor solution;

[0026] Step 3: The rare earth compound film is prepared by the suspension method (4000 r / min) of the suspension method (the thickness of less than 5 μm) is prepared on the surface of the sample of step 1;

[0027] Step 4: Put the sample into the furnace, pass into nitrogen and hydrogen, and the samples of the three-plating film are plasma nitrogen nitrogen, and the nitrogen nit...

Example Embodiment

[0029] Example 2

[0030] Step 1: Wash 38CrMoal steel samples with sandpaper and further polish to the mirror state, washed clean in acetone or alcohol solution;

[0031] Step 2: Weigh LA (NO 3 ) 3 · 6h 2 O (99.99%, 0.02mol), Fe (NO 3 ) 3 · 9h 2 O (98.5%, 0.02 mol) causes the molar ratio of the lanthanum ion and iron ions to 1: 1, and the main salt is dissolved in 50 ml of distilled water, and excess of citric acid (10g) is added and stirred for two hours to make iron ions and lanthanum. The ion is fully complexed, and the transparent rare earth compound is formed after 48 h. Lafeo 3 Precursor solution;

[0032] Step 3: The rare earth compound film (less than 5 μm having a thickness is less than 5 μm) is prepared using a suspension method (suspension machine 6000R / min).

[0033] Step 4: Put the sample into the furnace, pass into nitrogen and hydrogen, and the samples of the three-plating film are plasma nitrogen nitrogen, and the nitrogen nitrogen nitrogen nitrogen is 520 ° C, a...

Example Embodiment

[0034] Example 3

[0035] Step 1: Wash 38CrMoal steel samples with sandpaper and further polish to the mirror state, washed clean in acetone or alcohol solution;

[0036] Step 2: Weigh CE (NO 3 ) 3 · 6h 2 O (99.99%, 0.02mol), Fe (NO 3 ) 3 · 9h 2 O (98.5%, 0.02 mol) makes the molar ratio of the lanthanum ion and iron ions from 1: 1, and the main salt is dissolved in 50 ml of distilled water, and excess of citric acid (10g) is added and stirred for two hours to make iron ions and The ions are fully complexed, and they form a transparent rare earth compound Cefeo after standing for 48h. 3 Precursor solution;

[0037] Step 3: The rare earth compound film (thickness is less than 5 μm) is prepared by the suspension method on the sample surface of step 1;

[0038] Step 4: Put the sample into the furnace, pass into nitrogen and hydrogen, and the samples of the three-plating film are plasma nitrogen nitrogen, and the nitrogen nitrogen nitrogen nitrogen is 520 ° C, and the nitriding time is...

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Abstract

The invention relates to the technical field of plasma nitriding, in particular to a technology for accelerating plasma nitriding with assistance of a rare earth compound. The method comprises the following steps that firstly, a sample is polished to a mirror surface and cleaned, a rare earth compound precursor solution is prepared, a rare earth compound film is prepared on the surface of an alloy by using a suspension coating method or a scrape coating method, and finally, the alloy is subjected to plasma-assisted nitriding technology treatment. According to the method for accelerating plasma nitriding with the assistance of the rare earth compound, the problems that in the plasma nitriding process, in order to improve the thickness of a nitriding layer, temperature is increased, so that grains of the nitriding layer grow up, energy consumption is increased, and production efficiency is reduced are solved.

Description

technical field [0001] The invention relates to the technical field of plasma nitriding, in particular to a method for assisting accelerated plasma nitriding by rare earth compounds. Background technique [0002] Alloy materials such as steel materials, titanium alloy materials, etc. are widely used in various fields such as machinery, automobiles and aerospace due to their excellent mechanical properties. In order to improve the service performance of these materials, plasma nitriding technology is applied to improve the hardness, friction and wear performance, corrosion resistance and fatigue performance of these materials. The final service performance of alloy materials directly depends on the thickness and performance of the infiltrated layer, especially the fatigue performance depends on the thick infiltrated layer. The traditional way to increase the thickness of the nitriding layer is to increase the nitriding temperature and prolong the nitriding time. From the per...

Claims

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Application Information

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IPC IPC(8): C23C8/02C23C8/36
CPCC23C8/02C23C8/36
Inventor 杨阳张世宏周祥
Owner ANHUI UNIVERSITY OF TECHNOLOGY
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