Carbon doping device and carbon doping method for growing semi-insulating gallium arsenide single crystal
A gallium arsenide, semi-insulating technology, applied in chemical instruments and methods, crystal growth, single crystal growth and other directions, can solve the problems of uneven axial distribution, crystal intercalation, low single crystal rate, etc., to avoid the C axis The effect of uneven distribution
Active Publication Date: 2021-07-20
大庆溢泰半导体材料有限公司
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Problems solved by technology
In addition, due to reasons such as segregation in the melt, the directly mixed C powder is unevenly distributed along the axial direction, and low resistance is prone to appear at the tail of the crystal.
At the same time, the carbon powder that is not melted and mixed will cause intercrystals in the crystal, resulting in a low single crystal rate
Method used
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[0029] In order to make the technical problems, technical solutions and beneficial effects to be solved by the present invention clearer, the present invention will be further described in detail below in conjunction with the accompanying drawings and embodiments. It should be understood that the specific embodiments described here are only used to explain the present invention, not to limit the present invention.
[0030] A carbon-doped device for growing a semi-insulating gallium arsenide single crystal, comprising a quartz tube 4 and 2 sets of PBN crucibles, the PBN crucible 2 is assembled in the quartz tube 4, and a furnace with adjustable temperature is arranged outside the quartz tube 4 body 1, the two ends of the quartz tube 4 are equipped with sealing chucks 5, and the inner cavity of the quartz tube 4 is sealed under the sealing of the two sealing chucks 5, and the two ends of the quartz tube 4 are respectively provided with pipes communicating with the inner cavity of...
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Abstract
The invention discloses a carbon doping device and a carbon doping method for growing semi-insulating gallium arsenide single crystals, and relates to the technical field of semiconductor materials. The device comprises a quartz tube and a PBN crucible set, the PBN crucible set is arranged in the quartz tube, and sealing chucks are installed at the two ends of the quartz tube; pipelines are respectively arranged at two ends of the quartz tube, namely an inflation pipeline and an exhaust pipeline; a third on-off valve is arranged on the gas filling pipeline, two branch gas pipelines which are connected in parallel are arranged on the upstream of the gas filling pipeline and are respectively called an oxygen filling pipeline and a carbon filling pipeline, the oxygen filling pipeline is connected with an oxygen source, and the carbon filling pipeline is connected with a carbon gas source, wherein the on-off of the oxygen source or the carbon gas source is controlled through the valves; the downstream of the exhaust pipeline is provided with two branch air pipelines which are connected in parallel and are respectively called a deflation pipeline and a vacuumizing pipeline, the deflation pipeline is provided with a valve, and the vacuumizing pipeline is connected with a vacuumizing device. According to the invention, an oxygenating baking process and a C deposition process can be respectively implemented, and the two processes are sequentially carried out on the same equipment, so that the equipment is simplified, and the heat energy loss is reduced.
Description
technical field [0001] The invention belongs to the technical field of semiconductor materials, in particular to a carbon doping device and a carbon doping method for growing a semi-insulating gallium arsenide single crystal. Background technique [0002] Semi-insulating material, which has high resistivity (greater than 107Ω.cm). Circuits with MESFET, HEMT and HBT structures can be made on semi-insulating gallium arsenide (SI-GaAs) materials, which are mainly used in radar, satellite TV broadcasting, microwave and millimeter wave communication, wireless communication and optical fiber communication and other fields. Driven by the civilian wireless communication market, especially the mobile phone market and the 5G communication market in recent years, the market size of semi-insulating gallium arsenide materials has also seen rapid growth. [0003] High-purity gallium arsenide material itself is semi-insulating, but due to the complicated preparation process and high cost,...
Claims
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Login to View More IPC IPC(8): C30B11/06C30B29/42C23C16/26
CPCC30B11/065C30B11/002C30B29/42C23C16/26
Inventor 雷仁贵于会永冯佳峰袁韶阳赵中阳张军军赵春锋
Owner 大庆溢泰半导体材料有限公司