Carbon doping device and carbon doping method for growing semi-insulating gallium arsenide single crystal
A gallium arsenide, semi-insulating technology, applied in chemical instruments and methods, crystal growth, single crystal growth, etc., can solve problems such as uneven axial distribution, crystal intercrystals, low single crystal rate, etc., to avoid C-axis uneven distribution
Active Publication Date: 2022-02-08
大庆溢泰半导体材料有限公司
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Problems solved by technology
In addition, due to reasons such as segregation in the melt, the directly mixed C powder is unevenly distributed along the axial direction, and low resistance is prone to appear at the tail of the crystal.
At the same time, the carbon powder that is not melted and mixed will cause intercrystals in the crystal, resulting in a low single crystal rate
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[0029] In order to make the technical problems, technical solutions and beneficial effects to be solved by the present invention clearer, the present invention will be further described in detail below in conjunction with the accompanying drawings and embodiments. It should be understood that the specific embodiments described here are only used to explain the present invention, not to limit the present invention.
[0030] A carbon-doped device for growing a semi-insulating gallium arsenide single crystal, comprising a quartz tube 4 and 2 sets of PBN crucibles, the PBN crucible 2 is assembled in the quartz tube 4, and a furnace with adjustable temperature is arranged outside the quartz tube 4 body 1, the two ends of the quartz tube 4 are equipped with sealing chucks 5, and the inner cavity of the quartz tube 4 is sealed under the sealing of the two sealing chucks 5, and the two ends of the quartz tube 4 are respectively provided with pipes communicating with the inner cavity of...
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Abstract
A carbon doping device and carbon doping method for growing a semi-insulating gallium arsenide single crystal, relating to the technical field of semiconductor materials, including a quartz tube and a PBN crucible group, the PBN crucible is assembled in the quartz tube, and sealing chucks are installed at both ends of the quartz tube , the two ends of the quartz tube are respectively provided with pipelines, which are respectively called the inflation pipeline and the exhaust pipeline. Oxygen pipeline and carbon filling pipeline, the oxygen filling pipeline is connected with an oxygen source, and the carbon filling pipeline is connected with a carbon gas source, and the on-off of the oxygen source or carbon gas source is controlled by a valve; the downstream of the exhaust pipeline is The two parallel bronchial pipelines are respectively called a deflation pipeline and a vacuum pipeline, a valve is arranged on the deflation pipeline, and a vacuum device is connected to the vacuum pipeline. The application can implement the oxygen charging baking process and the C deposition process respectively, and the two processes are carried out sequentially on the same equipment, which simplifies the equipment and saves heat energy loss.
Description
technical field [0001] The invention belongs to the technical field of semiconductor materials, in particular to a carbon doping device and a carbon doping method for growing a semi-insulating gallium arsenide single crystal. Background technique [0002] Semi-insulating material, which has high resistivity (greater than 107Ω.cm). Circuits with MESFET, HEMT and HBT structures can be made on semi-insulating gallium arsenide (SI-GaAs) materials, which are mainly used in radar, satellite TV broadcasting, microwave and millimeter wave communication, wireless communication and optical fiber communication and other fields. Driven by the civilian wireless communication market, especially the mobile phone market and the 5G communication market in recent years, the market size of semi-insulating gallium arsenide materials has also seen rapid growth. [0003] High-purity gallium arsenide material itself is semi-insulating, but due to the complicated preparation process and high cost,...
Claims
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IPC IPC(8): C30B11/06C30B29/42C23C16/26
CPCC30B11/065C30B11/002C30B29/42C23C16/26
Inventor 雷仁贵于会永冯佳峰袁韶阳赵中阳张军军赵春锋
Owner 大庆溢泰半导体材料有限公司