Method for manufacturing semiconductor device and etching solution

Abstract

The invention relates to a method for manufacturing a semiconductor device and an etching solution. In a wet etching process to pattern a metal layer such as a p-metal work function layer over a dielectric layer such as a high-k gate dielectric layer, a selectivity of the wet etching solution between the metal layer and the dielectric layer is increased utilizing an inhibitor. The inhibitor includes such inhibitors as a phosphoric acid, a carboxylic acid, an amino acid, or a hydroxyl group.

Description

technical field [0001] Embodiments of the present invention relate to a method for manufacturing a semiconductor device, and more particularly relate to the composition of an etching solution used. Background technique [0002] Semiconductor devices are used in a variety of electronic applications, such as personal computers, cell phones, digital cameras, and other electronic equipment. The manufacturing method of semiconductor devices is usually to sequentially deposit insulating or dielectric layer, conductive layer, and semiconductor layer materials on the semiconductor substrate, and then use lithography to pattern the various material layers to form circuit components and units on the semiconductor substrate. [0003] The semiconductor industry continues to reduce the minimum structure size to continuously improve the integration density of various electronic components (such as transistors, diodes, resistors, capacitors, or the like), which can integrate more component...

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Problems solved by technology

However, as the minimum structure size shrinks, there will be additional problems to be solved

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