Novel GaN-based ESD protection circuit

Abstract

The invention belongs to the technical field of semiconductor devices and integrated circuits, and particularly relates to a GaN-based ESD protection circuit. Different from a conventional ESD protection circuit composed of a diode group, the ESD protection circuit is composed of an enhanced p-GaN HEMT device, a GaN-based trigger diode group and a current-limiting resistor. Reverse conduction can be achieved when the gate and the source of the enhanced p-GaN HEMT device have the same potential, so that the bidirectional protection function which a diode group protection circuit does not have is realized. Meanwhile, under the same protection level, compared with a diode group protection circuit, the leakage current can be reduced, and the power consumption caused by the leakage current can be reduced. In addition, the preparation process is compatible with the enhanced p-GaN HEMTs process, so that the preparation process difficulty when the ESD protection circuit is integrated with a protected device can be greatly reduced. The ESD protection circuit is suitable for circuits of enhanced p-GaN HEMTs gate protection, input and output ports of GaN radio frequency power amplifiers and the like.

Description

technical field [0001] The invention belongs to the technical field of semiconductor devices and integrated circuits, and in particular relates to a novel GaN-based ESD protection circuit. Background technique [0002] Gallium Nitride (GaN) is a representative of the third-generation wide-bandgap semiconductor material, and has attracted extensive attention from researchers from various countries. GaN materials have the characteristics of large forbidden band width, high saturated electron drift velocity, small dielectric constant and good chemical stability. Therefore, compared with Si-based devices, GaN-based HEMT devices have lower on-resistance, smaller Excellent properties such as parasitic capacitance and high breakdown voltage can meet the application requirements of the next generation system for semiconductor devices with higher power, smaller volume and higher frequency. [0003] However, the traditional AlGaN / GaN heterojunction-based devices are depletion-mode de...

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Problems solved by technology

However, due to the existence of the pinch-off diode group, this type of protection scheme can only provide one-way protection, and cannot provide two-way protection

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