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Ingot casting and crystal pulling apparatus comprising doping conduit having porous separation member for sublimating solid dopant

A technology for separating components and dopants, which is applied in the direction of polycrystalline material growth, crystal growth, single crystal growth, etc., and can solve the problems of increasing dopant concentration changes, uneven supply of dopants, etc.

Pending Publication Date: 2021-07-23
GLOBALWAFERS CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Such systems thus limit the size of silicon ingots that can be grown
Furthermore, such systems tend to supply dopants non-uniformly during the growth process, thereby increasing the variation in dopant concentration along the longitudinal axis of the growing ingot

Method used

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  • Ingot casting and crystal pulling apparatus comprising doping conduit having porous separation member for sublimating solid dopant
  • Ingot casting and crystal pulling apparatus comprising doping conduit having porous separation member for sublimating solid dopant
  • Ingot casting and crystal pulling apparatus comprising doping conduit having porous separation member for sublimating solid dopant

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example

[0041] The process of the present disclosure is further illustrated by the following examples. These examples should not be viewed in a limiting sense.

example 1

[0042] Example 1: Stability and repeatability of the delivery system by using adulterants

[0043] Single crystal silicon ingots were prepared using different amounts of phosphorus doping (lightly doped, moderately doped, heavily doped). Passing through a dopant conduit with a partition member therein prior to ingot growth figure 1 A dopant supply system for doping the silicon melt. The outlet of the dopant conduit was approximately 5 mm from the surface of the melt. exist Figure 4 A box plot showing the distribution of resistivity at the seed end of several ingots is shown in . Such as Figure 4 shows that the distribution of seed terminal resistivity is relatively tight for all three dopant amounts, demonstrating the stability and repeatability of doping by using the dopant supply system described herein.

[0044] In the use of a dopant conduit having a separation member therein figure 1 The number of attempts to grow a single crystal ingot is reduced by up to 4% wh...

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Abstract

The invention discloses cast ingot crystal pulling equipment for preparing a silicon cast ingot. The cast ingot crystal pulling equipment comprises a dopant supply system. The dopant supply system includes a dopant conduit having a porous partition member disposed across the dopant conduit. A solid dopant falls onto the partition member, and the solid dopant sublimates at the partition member. The sublimated dopant is carried through the separation member by an inert gas to contact and dope the silicon melt.

Description

[0001] Cross References to Related Applications [0002] This application claims priority to U.S. Patent Application No. 16 / 220,060, filed December 14, 2018, and U.S. Patent Application No. 16 / 220,058, filed December 14, 2018, both of which The entire content of the case is incorporated herein by reference. technical field [0003] The field of the disclosure relates to an ingot pulling apparatus comprising a dopant supply system for preparing a doped silicon ingot, and in particular to doping dopant supply system for the dopant conduit. Background technique [0004] Single crystal silicon, which is the starting material for most processes in the manufacture of semiconductor electronic components, is usually prepared by the so-called Czochralski ("Cz") method. In this method, polycrystalline silicon ("polysilicon") is charged to a crucible and melted, a seed crystal is brought into contact with the molten silicon, and a single crystal is grown by slow extraction. [0005...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B15/04C30B29/06
CPCC30B29/06C30B15/04
Inventor R·斯卡拉F·巴坦S·哈林格
Owner GLOBALWAFERS CO LTD