Recycled polycrystalline silicon ingot casting process based on layered charging mode

A polysilicon, layered technology, applied in the direction of polycrystalline material growth, crystal growth, single crystal growth, etc., can solve problems such as being unfavorable to improve the quality of silicon ingots

Active Publication Date: 2021-07-30
NANTONG UNIVERSITY
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

From the perspective of impurity segregation, the impurity concentration in the melt increases with the crystallization of the silicon ingot, which will inevitably lead to a gradual increase in the impurity concentration in the silicon ingot from the bottom up, which is not conducive to improving the quality of the silicon ingot

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  • Recycled polycrystalline silicon ingot casting process based on layered charging mode
  • Recycled polycrystalline silicon ingot casting process based on layered charging mode

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Embodiment Construction

[0020] The present invention will be further described below in conjunction with specific embodiments.

[0021] This embodiment is based on the regeneration polysilicon ingot process of layered charging mode, and the steps are as follows:

[0022] Step 1, laying a native polysilicon layer on the bottom of the crucible;

[0023] Step 2. Lay multiple layers of silicon waste on the native polysilicon layer. The silicon waste layers are arranged from bottom to top according to the grade of silicon waste from low to high. The grade of silicon waste is divided according to the average resistivity of silicon waste. The lower the average rate, the lower the grade of silicon waste;

[0024] Step 3, laying a layer of native polysilicon layer on the top;

[0025] Step 4, heating the ingot.

[0026] Among them, the classification method of silicon waste grade is as follows:

[0027] Pulverize polysilicon waste from different batches and sources and put them into containers for mixing;...

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Abstract

The invention relates to a recycled polycrystalline silicon ingot casting process based on a layered charging mode. The recycled polycrystalline silicon ingot casting process is characterized by comprising the following steps: a primary polycrystalline silicon layer are laid at the bottom of a crucible; a plurality of silicon waste material layers are laid on the primary polycrystalline silicon layer, the silicon waste material layers are arranged from bottom to top according to the silicon waste material grades from low to high, the silicon waste material grades are divided according to the resistivity average value of the silicon waste materials, and the lower the resistivity average value is, the lower the silicon waste material grades are; a native polycrystalline silicon layer is laid on the top; and the cast ingot is heated. According to the invention, the silicon material with the lowest resistance and the highest impurity concentration is finally molten through layered charging, so that the influence of high-concentration impurities on the quality of the silicon ingot is reduced.

Description

technical field [0001] The invention belongs to the technical field of crystalline silicon ingots, in particular to the graded regeneration of silicon waste. Background technique [0002] In the conventional production of regenerated polysilicon ingots, silicon wastes of different resistance levels are usually put together, stirred as evenly as possible, and then loaded into crucibles for ingot production. Since the quality of a single furnace silicon ingot reaches 850Kg, it is impossible to mix the materials evenly in this charging method. This will inevitably lead to high impurity concentration in local areas of silicon ingots, which will affect the minority carrier lifetime and defect density of silicon ingots. Therefore, it is necessary to study a new charging method for regenerating polysilicon ingots. [0003] The polysilicon ingot casting process can be mainly divided into four stages: heating and melting, crystal growth, annealing, and cooling out of the furnace. F...

Claims

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Application Information

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IPC IPC(8): C30B28/06C30B29/06
CPCC30B28/06C30B29/06
Inventor 王强宋帅迪王松
Owner NANTONG UNIVERSITY
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