Unlock instant, AI-driven research and patent intelligence for your innovation.

Manufacturing method of semiconductor device

A manufacturing method and semiconductor technology, applied in the manufacture of semiconductor/solid-state devices, electrical components, circuits, etc., can solve the problems of scrapped semiconductor devices, and the failure of semiconductor devices to pass the quality inspection of the factory, so as to reduce stress, improve appearance and performance, Avoid shattering effects

Active Publication Date: 2021-07-30
SHANGHAI HUAHONG GRACE SEMICON MFG CORP
View PDF8 Cites 2 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Since the surface of the metal layer 120 already has protrusion defects, and the etching rates of different positions in the metal layer 120 are different, there will also be protrusions on the surface of the etched region in the interlayer dielectric layer 110 defects (ie image 3 The part indicated by the middle circle), the protruding defect will affect the morphology and performance of the semiconductor device, causing the semiconductor device to fail the outgoing quality inspection (Outgoing Quality Assure, OQA), and in severe cases may cause the semiconductor device scrapped

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Manufacturing method of semiconductor device
  • Manufacturing method of semiconductor device
  • Manufacturing method of semiconductor device

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0054] Figure 8 For the flow chart of the manufacturing method of the semiconductor device provided by this embodiment, refer to Figure 8 , the manufacturing method of the semiconductor device comprises:

[0055] Step S01: providing a substrate on which an interlayer dielectric layer and a metal layer are sequentially formed, an opening is formed in the metal layer, and a first protruding defect exists on the surface of the interlayer dielectric layer exposed by the opening ;

[0056] Step S02: forming a protection layer on the surface of the metal layer and the sidewall and bottom of the opening, and forming a second protrusion defect on the surface of the protection layer above the first protrusion defect; and

[0057] Step S03: forming a dielectric layer on the protection layer by using a high-density plasma chemical vapor deposition process, so as to remove the second protrusion defect.

[0058] Figure 9-Figure 14 A schematic structural diagram corresponding to each...

Embodiment 2

[0067] Figure 15 For the flow chart of the manufacturing method of the semiconductor device provided by this embodiment, refer to Figure 15 , the manufacturing method of the semiconductor device comprises:

[0068] Step S01: providing a substrate on which an interlayer dielectric layer and a metal layer are sequentially formed, an opening is formed in the metal layer, and a first protruding defect exists on the surface of the interlayer dielectric layer exposed by the opening ;

[0069]Step S02: filling the opening with a dielectric layer, the dielectric layer extending to cover the metal layer on both sides of the opening, and a second protruding defect is formed on the surface of the dielectric layer above the first protruding defect;

[0070] Step S03: Perform planarization treatment on the dielectric layer to remove the second protrusion defect.

[0071] Figure 16-Figure 20 A schematic structural diagram corresponding to each step in the manufacturing method of the ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention provides a manufacturing method of a semiconductor device, which comprises the steps of providing a substrate, forming an interlayer dielectric layer and a metal layer on the substrate in sequence, forming an opening in the metal layer, and having a first protrusion defect on the surface of the interlayer dielectric layer exposed by the opening; forming a protection layer on the surface of the metal layer and the side wall and the bottom of the opening, removing a second protrusion defect on the protection layer by adopting a high-density plasma chemical vapor deposition process, and depositing a dielectric layer; or, filling a dielectric layer in the opening and extending the metal layer covering the two sides of the opening, and performing planarization processing on the dielectric layer to remove the second protrusion defect. According to the invention, the second projection defect on the surface of the protective layer or the dielectric layer is removed, so that the influence of the first projection defect on the surface of the interlayer dielectric layer on the surface flatness of a subsequently formed passivation layer and other semiconductor structures is reduced or avoided, and the morphology and performance of the semiconductor device are improved.

Description

technical field [0001] The invention relates to the technical field of integrated circuit manufacturing, in particular to a method for manufacturing a semiconductor device. Background technique [0002] In the semiconductor manufacturing process, the metallization and passivation of the surface of semiconductor devices is an essential part of the semiconductor manufacturing process. Metallization of semiconductor devices is the process of depositing conductive metal films on said semiconductor devices using chemical or physical treatments. [0003] figure 1 For an electron microscope image of the surface of a top metal layer, see figure 1 , when the material of the top metal layer is metal aluminum or an alloy containing aluminum, the surface of the top metal layer is uneven, and there are tiny protrusions (ie figure 1 The part indicated by the circle in the middle). figure 2 with image 3 It is a structural schematic diagram corresponding to some steps in a manufactur...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/762H01L21/768
CPCH01L21/76224H01L21/76831H01L21/76834
Inventor 刘冲任媛媛严强生陈宏曹秀亮
Owner SHANGHAI HUAHONG GRACE SEMICON MFG CORP