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Mask, preparation and application thereof

A mask plate and mask layer technology, which is applied in semiconductor/solid-state device manufacturing, vacuum evaporation plating, coating, etc., can solve the problem of gravity deformation of the mask plate, improve patterning accuracy, reduce shadow effect, high resolution effects

Pending Publication Date: 2021-08-03
睿馨(珠海)投资发展有限公司
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0008] The invention provides a mask, its preparation and its application to solve the problem of gravitational deformation of the mask in the prior art

Method used

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  • Mask, preparation and application thereof
  • Mask, preparation and application thereof
  • Mask, preparation and application thereof

Examples

Experimental program
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Embodiment 1

[0038] see Figure 1-3 Shown: a mask plate 1, which is an ultra-thin multi-layer structure film with a desired deposition pattern, and has a ring-shaped support frame 2 outside it, and the ring-shaped support frame 2 extends along the perimeter of the multi-layer structure.

[0039] The mask plate 1 includes at least two layers: a first mask layer 10 and a second mask layer 20 . Wherein the first mask layer 10 contains a first material with residual tensile stress, and the first material in this embodiment is silicon nitride. The second mask layer 20 contains a second material with residual compressive stress, and the second material in this embodiment is silicon dioxide. In addition, in order to directly pattern a dense pattern with a size less than 10 microns, the multilayer film of the mask plate 1 is very thin, and preferably has a thickness equal to or less than 1 micron. In this embodiment, the first mask layer 10 is 50 nm, and the remaining The tensile stress is 1 GPa...

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Abstract

The invention relates to a mask, preparation and application thereof. The mask comprises at least two layers, namely a first mask layer and a second mask layer, the first mask layer contains a first material with residual tensile stress; the second mask layer contains a second material with residual compressive stress; the first mask layer and the second mask layer keep the characteristics of residual stress when the first mask layer and the second mask layer are formed on a rigid substrate; and when the mask releases the internal residual stress, the second mask layer expands transversely, the first mask layer shrinks transversely, and the mask reaches the lowest strain energy state under the combined action of the residual stress. The structure disclosed by the mask has the beneficial effects that the stress zero-potential surface of the mask deviates from the middle position of the structure, so that torque perpendicular to the surface of the mask is generated, during application, the influence of gravity on the mask structure is compensated due to the stress effect, so that the influence of the shadow effect is reduced, the patterning precision of material deposition is improved, and the high-resolution direct patterning technology becomes possible.

Description

technical field [0001] The invention relates to the technical field of material mask patterned deposition, in particular to a mask plate, its preparation and its application. Background technique [0002] In semiconductor manufacturing, a common method of patterning layers of material is to deposit a layer of material over the entire surface of a substrate and then remove the deposited material in areas other than the desired pattern. Usually, photoresist is used to expose the material layer to form a photoresist mask, and then an etchant is used to remove the exposed material to obtain the desired pattern. The photoresist mask is then removed, and the substrate and etch residues are cleaned. During this process, all materials on the substrate are exposed to chemical solvents, which will cause damage to many organic materials. Therefore, direct patterning technology should be used for patterning organic materials. [0003] Direct patterning technology is to directly form t...

Claims

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Application Information

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IPC IPC(8): C23C14/04C23C14/12C23C14/24H01L51/00H01L51/56
CPCC23C14/042C23C14/12C23C14/24H10K71/166H10K71/00
Inventor 茆胜
Owner 睿馨(珠海)投资发展有限公司
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