Spherical aberration test mask and spherical aberration detection method of photoetching machine

Abstract

The invention discloses a spherical aberration test mask and a spherical aberration detection method of a photoetching machine, and relates to the field of semiconductor manufacturing. Spherical aberration test marks corresponding to different CDs are fully distributed on the spherical aberration test mask, and the size of the spherical aberration test mask is the same as that of the maximum exposure area of the photoetching machine to be tested; each spherical aberration test mark is composed of a first test sub-mark and a second test sub-mark, the first test sub-mark is located above the second test sub-mark, the first test sub-mark and the second test sub-mark are the same in shape, and the CD of the first test sub-mark is larger than that of the second test sub-mark; the test sub-mark comprises two types of light-transmitting rectangular strips, and the first type of light-transmitting rectangular strips are respectively arranged above and on the right side of the second type of light-transmitting rectangular strips; the critical size of the first type of light-transmitting rectangular strip in the second test sub-mark is the same as the minimum resolution; the problem that spherical aberration detection of an existing photoetching machine is complex is solved. And the effect of improving the simplicity and convenience of measuring the spherical aberration of the photoetching machine is achieved.

Description

technical field [0001] The present application relates to the field of semiconductor manufacturing, in particular to a spherical aberration test mask and a spherical aberration detection method for a photolithography machine. Background technique [0002] The photolithography machine is one of the key equipments in the manufacture of integrated circuits, through which the pattern on the mask plate is transferred to the silicon wafer coated with photoresist. [0003] The types of lithography machines include contact lithography machines, proximity lithography machines, and projection lithography machines. Currently, a projection lithography machine includes a projection objective lens and an illumination system. Due to optical effects, some aberrations inevitably exist in the projection objective lens in the lithography machine. The aberrations are mainly divided into spherical aberration, coma, astigmatism, and wave aberration. [0004] When there is spherical aberration i...

AI Technical Summary

Problems solved by technology

[0004] When there is spherical aberration in the projection lens, it shows that the best focal lengths (Best Foucs) corresponding to different sizes of critical dimensions (CD, critical demotion) are different. After exposing the pattern on the mask plate to the silicon wafer, the Graphics have differences in the X direction and Y direction, which affects the control accuracy of critical demotion (CD, critical demotion) in the manufacturing process

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