Inverter IGBT aging on-line monitoring method and system based on junction temperature normalization

Abstract

The invention discloses an inverter IGBT bonding wire aging on-line monitoring method and system based on junction temperature normalization, and belongs to the field of power electronic equipment core device reliability, and the method comprises the steps: building an aging model through combining an aging mechanism of an IGBT bonding wire; selecting characteristic parameters of aging and junction temperature, deducing a characteristic identification formula in combination with an aging model, and performing parameter identification on an inverter IGBT module; on the basis of a novel collector-emitter saturation voltage drop Vceon sampling circuit, a method for monitoring aging of an IGBT bonding wire of an inverter on line is provided. The sampling circuit can capture the full-period waveform of Vceon changing along with the collector current Ic so that the characteristic parameters of aging and junction temperature are obtained for state monitoring; interference of the junction temperature on state monitoring can be eliminated through junction temperature normalization; finally, comparing the IGBT aging index with the aging threshold value to judge the aging state in real time, and triggering the inverter IGBT failure early warning according to the aging state.

Description

technical field [0001] The invention belongs to the field of reliability of core components of power electronic equipment, and more specifically relates to an on-line monitoring method and system for aging of inverter IGBT bonding wires based on junction temperature normalization. Background technique [0002] At present, inverters have been more and more widely used in the fields of new energy power generation, transportation and industrial automation. The insulated gate bipolar transistor (insulated gate bipolar transistor, IGBT) module is the core device of the power converter, and its health status affects the safe and reliable operation of the power converter. According to statistics, power semiconductor devices such as IGBT and MOSFET are the most vulnerable devices in the inverter, accounting for more than 30% of the failure causes of the inverter. [0003] The working environment of the inverter is complex and the switching frequency is high, and the IGBT is subject...

AI Technical Summary

Problems solved by technology

Although V ce_on It is very suitable as the aging state monitoring parameter of IGBT, but it has a strong coupling relationship with the junction temperature, and it is easily disturbed by the junction temperature during the aging state monitoring process. Therefore, how to eliminate the interference of the junction temperature on the aging state monitoring is currently the Urgent technical issues to be resolved

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