The utility model provides a kind of high-reliability
trench gate silicon carbide VDMOS, comprising: drift layer lower side surface is connected to
silicon carbide substrate upper side surface;Drift layer is equipped with recess;P-type
source area lower side surface is connected to drift layer upper side surface;P-type well area lower side surface is connected to drift layer upper side surface, P-type well area outer side surface is connected to P-type
source area inner side surface;P-type well area is equipped with N-type
source area;Insulating medium layer lower part is in recess, insulating medium layer is connected to P-type well area and N-type source area;Insulating medium layer is equipped with suspension gate and groove;Suspension gate is located below groove;Gate
metal layer is equipped in groove;Source
metal layer is connected N-type source area and P-type source area respectively;Drain
metal layer is connected to
silicon carbide substrate lower side surface;By splitting the
conductive channel of device, it can ensure that the device is turned off, and provide body
diode large current freewheeling, improve the reliability of device.