Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Semiconductor device and preparation method thereof

A semiconductor and device technology, applied in the field of semiconductor devices and their preparation, can solve the problems of high manufacturing cost of semiconductor devices and slow data communication, and achieve the effect of reducing manufacturing cost and improving data communication speed.

Pending Publication Date: 2021-08-06
YANGTZE ADVANCED MEMORY INDUSTRIAL INNOVATION CENTER CO LTD
View PDF0 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The invention provides a semiconductor device and a preparation method thereof, which are used to solve the problem of high manufacturing cost of the semiconductor device and data communication between different storage arrays caused by the fact that the drivers of different storage arrays in the semiconductor device are controlled by different controllers. slower problem

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Semiconductor device and preparation method thereof
  • Semiconductor device and preparation method thereof
  • Semiconductor device and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0051] The following will clearly and completely describe the technical solutions in the embodiments of the present invention with reference to the drawings in the embodiments of the present invention. Apparently, the described embodiments are only some of the embodiments of the present invention, but not all of them. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without creative efforts fall within the protection scope of the present invention.

[0052] In describing the present invention, it should be understood that the terms "center", "longitudinal", "transverse", "length", "width", "thickness", "upper", "lower", "front", " Orientation indicated by rear, left, right, vertical, horizontal, top, bottom, inside, outside, clockwise, counterclockwise, etc. The positional relationship is based on the orientation or positional relationship shown in the drawings, which is only for the convenience of describing the pres...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention provides a semiconductor device and a preparation method thereof. The semiconductor device comprises a plurality of wafers which are bonded with each other, a plurality of storage arrays which are respectively arranged on the plurality of wafers, a plurality of drivers which are electrically connected with the plurality of storage arrays in a one-to-one correspondence manner, and a common controller which is arranged on one of the plurality of wafers, and the common controller is electrically connected with the plurality of drivers and used for controlling the plurality of drivers to process data of the plurality of storage arrays. The common controller in the semiconductor device can control the plurality of drivers to control the plurality of storage arrays to perform read-write operation, so when the semiconductor device needs to carry out operations such as memory change and the like, data communication can be carried out without the help of an external circuit and wiring, therefore, the data communication speed between different memory arrays in the semiconductor device is effectively improved, and meanwhile, the manufacturing cost of the semiconductor device is reduced.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a semiconductor device and a preparation method thereof. Background technique [0002] As technology develops, the semiconductor industry is constantly seeking new ways to produce a greater number of memory cells per memory die in a memory device. In order to further increase the storage density of the memory, a memory device with a three-dimensional structure has been developed. The three-dimensional memory includes multiple memory cells stacked along the vertical direction, which can double the integration level on a wafer per unit area and reduce the cost. Among non-volatile memories, 3D NAND Flash (three-dimensional NAND flash memory) memories with 32 layers, 64 layers, or even higher layers have been designed. [0003] In the prior art, a phase change memory (Phase Change Memory, PCM) is usually used as a buffer of the 3D NAND Flash memory to improve the speed and pe...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01L27/11524H01L27/11556H01L27/1157H01L27/11582H01L27/24H01L21/50G11C5/02H10B41/35H10B41/27H10B43/27H10B43/35
CPCH01L21/50G11C5/025H10B63/84H10B41/35H10B41/27H10B43/35H10B43/27
Inventor 刘峻
Owner YANGTZE ADVANCED MEMORY INDUSTRIAL INNOVATION CENTER CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com