CVD pipeline and CVD device with same

A pipeline and heating device technology, applied in the direction of gaseous chemical plating, metal material coating process, coating, etc., can solve the problem of production yield decline and achieve the effect of uniform coating distribution

Pending Publication Date: 2021-08-10
JUCAN PHOTOELECTRIC TECH (SUQIAN) CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The purpose of the present invention is to improve the problem that the MO source is attached to the pipeline wall, which causes the production yield to drop

Method used

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  • CVD pipeline and CVD device with same
  • CVD pipeline and CVD device with same
  • CVD pipeline and CVD device with same

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Embodiment Construction

[0021] The present invention will be described in detail below in conjunction with specific embodiments shown in the accompanying drawings. However, these embodiments do not limit the present invention, and any structural, method, or functional changes made by those skilled in the art according to these embodiments are included in the protection scope of the present invention.

[0022] figure 2 It is a schematic diagram of an embodiment of the CVD device of the present invention, please refer to figure 2 . The CVD apparatus 100 includes a CVD pipeline 110 , a gas supply source 120 and a reaction chamber 130 . CVD pipeline 110 is used for supplying the gas (comprising reaction gas and carrier gas) to be used in CVD process, and one end of CVD pipeline 110 is connected with gas supply source 120, and the other end of CVD pipeline 110 is connected with reaction chamber 130, and gas supply The source 120 corresponds to the gas to be supplied by the CVD pipeline 110 .

[0023...

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Abstract

The invention discloses a CVD (chemical vapor deposition) pipeline and a CVD device with the same. The CVD pipeline is used for supplying gas to be used in a CVD process, and a heating device is arranged on the wall of the CVD pipeline. A pneumatic valve of the gas in an Alkyl H2 pipeline is frequently opened and closed, so that an MO (molybdenum) source is attached to the inner wall of the Alkyl H2 pipeline. Therefore, the heating device is additionally arranged on the wall of the CVD pipeline, the wall temperature of the CVD pipeline can reach a certain temperature, the MO source is constantly kept in a stable state and cannot be attached to the wall of the CVD pipeline, the MO source possibly attached in the prior art cannot be carried into carrier gas at a certain node, and a coating on the surface of a product is uniformly distributed.

Description

technical field [0001] The invention relates to a CVD pipeline and a CVD device with the same, in particular to a high-yield CVD pipeline and a CVD device with the same. Background technique [0002] Light Emitting Diode (LED for short) has the advantages of high luminous intensity, high efficiency, small size, and long service life, and is considered to be one of the most potential light sources at present. In recent years, LEDs have been widely used in daily life, such as lighting, signal display, backlight, car lights and large-screen display and other fields. In industry, metal organic compound chemical vapor deposition (MOCVD for short) equipment is usually used for growth. [0003] In the current mass production process of MOCVD in the semiconductor industry, it often happens that due to the unstable gas flow, unnecessary doping in the gas is brought into the reaction chamber to participate in the reaction, which leads to uneven distribution of the coating on the surf...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C16/455C23C16/18
CPCC23C16/45561C23C16/18
Inventor 王明刘勇孙晨立凡世明江汉徐志军
Owner JUCAN PHOTOELECTRIC TECH (SUQIAN) CO LTD
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