Method for purifying industrial silicon by microalloying refining
A micro-alloying, refining and purification technology, applied in chemical instruments and methods, inorganic chemistry, silicon compounds, etc., can solve the problems of high energy consumption, low efficiency, high cost, etc., to increase the specific surface area, realize multiple recycling, improve The effect of leaching rate
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Embodiment 1
[0032] 1) Micro-alloying refining: add flux (10% Cu+5% Sn) to industrial silicon for refining, mix industrial silicon and alloy powder evenly, place in a high-purity corundum crucible, and put it in a tubular atmosphere furnace. Raise the temperature to 1550°C at 5-10°C / min, keep it warm for 10h, then cool down to 750°C at 1-2°C / min, and then quench in an inert gas. Argon is selected as the inert gas in this embodiment.
[0033] 2) Wet leaching: ball milling the refined alloy sample to a particle size of 1-2 μm, using 3M HNO 3 +1M HF, solid-to-liquid ratio 1: (5-10) for pickling, temperature 50-80°C, magnetic stirring, pickling time 8h, then add 0.5MH to the solution 2 o 2 +2M HF for Cu-catalyzed pickling, temperature 50-80°C, magnetic stirring, pickling for 2-5h. The liquid is centrifuged to obtain high-purity silicon particles with a purity of over 99.999%. Among them, the removal rate of B impurities is 73%, and the removal rate of P impurities is 89%.
[0034] 3) Elect...
Embodiment 2
[0036] The technical solution in this embodiment is basically the same as that in Embodiment 1, except that the flux is composed of 10% Cu+10% Sn.
[0037] The prepared high-purity silicon particles have a purity of over 99.999%. Among them, the removal rate of B impurities is 69%, and the removal rate of P impurities is 70%.
Embodiment 3
[0039] The technical solution in this embodiment is basically the same as that in Embodiment 1, except that the flux is composed of 30% Cu+10% Sn.
[0040] The prepared high-purity silicon particles have a purity of over 99.999%. Among them, the removal rate of B impurities is 53%, and the removal rate of P impurities is 59%.
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