Power supply circuit applied to igct gate drive

Abstract

The present disclosure provides a power supply circuit applied to IGCT gate drive. The power supply circuit includes a high-potential energy acquisition unit, a first input terminal of which is connected to the anode of a GCT device, and a second input terminal of which is connected to the cathode of the GCT device. outputting a first voltage according to the voltage of the anode and the cathode of the GCT device; the DC / DC conversion unit, the input end of which is connected to the output end of the high-potential energy-fetching unit, is used to convert the output of the high-potential energy-fetching unit The first voltage is converted into a second voltage, and the second voltage is output; the gate drive unit, the input end of which is connected to the output end of the DC / DC conversion unit, is used for providing according to the DC / DC conversion unit The second voltage outputs the gate control current required by the GCT device, so as to realize the self-power supply of the IGCT gate drive. The power supply circuit has a simple structure, no additional isolation measures, no ground power supply, no secondary voltage regulation, and higher efficiency.

Description

technical field [0001] The present disclosure relates to the field of electronic power control, in particular to a power supply circuit applied to IGCT gate drive. Background technique [0002] Integrated Gate Commutated Thyristors (IGCT) is a new type of power semiconductor switching device used in giant power electronic complete sets developed for medium voltage inverters. IGCT includes gate commutated thyristors (Gate Commutated Thyristors, GCTs) and gate drive units, specifically integrating gate turn-off thyristors (GTO) with anti-parallel diodes and gate drive circuits, It is then connected externally with low inductance to its gate driver. IGCT has high GTO blocking ability and low on-state voltage drop, and the same switching performance as IGBT. It is an ideal megawatt-level, medium-voltage switching device, which is widely used in high-power medium-voltage converters. [0003] As a fully-controlled high-power semiconductor device, IGCT, like IGBT devices, can be ...

AI Technical Summary

Problems solved by technology

When the existing IGCT devices are applied in multi-stage series, the power supply mode of the gate drive is mainly the high-voltage isolation power supply of the ground transformer. The first implementation mode is to supply each IGCT through AC / DC conversion after the high-voltage isolation of the transformer. The second implementation mode is AC / DC high-voltage isolation conversion supplies each IGCT. The second implementation method is to supply power to the high-position CT induction coil and conversion circuit of the ground current source. These three power supply methods need to supply power from the ground to the IGCT device end, which is not suitable for the application of multi-series power grids. Suitable for

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