Terahertz waveguide sensing device based on Fano resonance coupling resonant cavity and preparation method thereof
A technology of resonant coupling and sensing device, applied in the field of terahertz subwavelength structure sensing, can solve the problems of large size, unfavorable integration, complicated preparation process, etc., achieving the effect of small size, easy integration, and solving mutual interference
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Embodiment 1
[0047] Such as figure 1 with figure 2As shown, the terahertz waveguide sensor device based on Fano resonance coupling resonator in this embodiment includes a substrate 1 and a waveguide sensing unit, the waveguide sensing unit is arranged on the substrate 1, and the waveguide sensing unit includes Waveguide 2, rectangular resonant cavity 3 and metal wall 4, the rectangular resonant cavity 3 is directly connected to one side of the waveguide 2 in a direction perpendicular to the waveguide 2, and the metal wall 4 is arranged at a set distance on one side of the rectangular resonant cavity 3 In the waveguide medium, the center of the metal wall is provided with an aperture; the direction of the rectangular resonant cavity is kept parallel to the polarization direction of the electric field, and the input end of the waveguide 2 is used to receive the terahertz wave, so that the terahertz wave is When the resonance conditions are met, Fano resonance occurs.
[0048] In the speci...
Embodiment 2
[0056] This embodiment provides a method for preparing a terahertz waveguide sensor device based on a Fano resonance coupling resonator cavity as described above, the principle of which is as follows:
[0057] Clean the substrate silicon wafer;
[0058] Spin-coat photoresist on the substrate silicon wafer;
[0059] Electron beam exposure according to the required pattern and pre-calculated structural parameters;
[0060] Develop and fix the photoresist after electron beam exposure;
[0061] Etching the slot waveguide and rectangular resonant cavity;
[0062] Remove the excess photoresist to obtain a waveguide-rectangular cavity-silicon wall structure made of silicon;
[0063] A gold film is grown on the outer surface of the silicon waveguide-rectangular resonator-silicon wall structure to obtain a waveguide-rectangular resonator-metal wall structure;
[0064] Clean the waveguide-rectangular resonant cavity-metal wall structure to obtain a terahertz waveguide sensor device ...
Embodiment 3
[0075] Transmission curve test of terahertz metal dielectric waveguide device based on Fano resonance coupled resonator:
[0076] The terahertz wave is incident along the waveguide from the input end at a distance of 60 μm from the center of the rectangular resonant cavity. During the transmission process, a part of it will couple with the resonant cavity and enter the resonant cavity, resulting in narrow-band discrete modes, such as image 3 The curve in "Rectangular cavity only" is shown; part of it will be reflected back by the reflection of the metal wall, resulting in a broadband continuous mode, such as image 3 As shown in the curve "Only the metal wall" in ; under the interaction between the two modes, when the resonance condition is met, a highly transmissive, sharp Fano resonance is detected at the waveguide output at a distance of 60 μm from the center of the resonator, Such as image 3 The curves in "Complete Structure" are shown. The metal material is gold, and ...
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