Terahertz waveguide sensing device based on fano resonance coupling resonator and its preparation method
A resonant coupling and sensing device technology, applied in the field of terahertz sub-wavelength structure sensing, can solve the problems of cumbersome preparation process, unfavorable integration, large size, etc., and achieve the effect of solving mutual interference, easy integration, and small size
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Embodiment 1
[0047] like figure 1 and figure 2As shown, the terahertz waveguide sensor device based on Fano resonance coupling resonator in this embodiment includes a substrate 1 and a waveguide sensing unit, the waveguide sensing unit is arranged on the substrate 1, and the waveguide sensing unit includes Waveguide 2, rectangular resonant cavity 3 and metal wall 4, the rectangular resonant cavity 3 is directly connected to one side of the waveguide 2 in a direction perpendicular to the waveguide 2, and the metal wall 4 is arranged at a set distance on one side of the rectangular resonant cavity 3 In the waveguide medium, the center of the metal wall is provided with an aperture; the direction of the rectangular resonant cavity is kept parallel to the polarization direction of the electric field, and the input end of the waveguide 2 is used to receive the terahertz wave, so that the terahertz wave is When the resonance conditions are met, Fano resonance occurs.
[0048] In the specific ...
Embodiment 2
[0056] This embodiment provides a method for preparing a terahertz waveguide sensor device based on a Fano resonance coupling resonator cavity as described above, the principle of which is as follows:
[0057] Clean the substrate silicon wafer;
[0058] Spin-coat photoresist on the substrate silicon wafer;
[0059] Electron beam exposure according to the required pattern and pre-calculated structural parameters;
[0060] Develop and fix the photoresist after electron beam exposure;
[0061] Etching the slot waveguide and rectangular resonant cavity;
[0062] Remove the excess photoresist to obtain a waveguide-rectangular cavity-silicon wall structure made of silicon;
[0063] A gold film is grown on the outer surface of the silicon waveguide-rectangular resonator-silicon wall structure to obtain a waveguide-rectangular resonator-metal wall structure;
[0064] Clean the waveguide-rectangular resonant cavity-metal wall structure to obtain a terahertz waveguide sensor device ...
Embodiment 3
[0075] Transmission curve test of terahertz metal dielectric waveguide device based on Fano resonance coupled resonator:
[0076] The terahertz wave is incident along the waveguide from the input end at a distance of 60 μm from the center of the rectangular resonant cavity. During the transmission process, a part of it will couple with the resonant cavity and enter the resonant cavity, resulting in narrow-band discrete modes, such as image 3 The curve in "Rectangular cavity only" is shown; part of it will be reflected back by the reflection of the metal wall, resulting in a broadband continuous mode, such as image 3 As shown in the curve "Only the metal wall" in ; under the interaction between the two modes, when the resonance condition is satisfied, a highly transmissive, sharp Fano resonance is detected at the waveguide output at a distance of 60 μm from the center of the resonator, like image 3 The curves in "Complete Structure" are shown. The metal material is gold, a...
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