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Semiconductor device and forming method thereof

A technology for semiconductors and devices, applied in the field of semiconductor devices and their formation, can solve problems such as the performance of semiconductor devices needs to be improved, and achieve the effects of avoiding ineffective injection, reducing costs, and avoiding leakage.

Active Publication Date: 2021-08-27
SEMICON MFG INT (SHANGHAI) CORP +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] However, the performance of semiconductor devices manufactured by existing methods for manufacturing MOS transistors still needs to be improved

Method used

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  • Semiconductor device and forming method thereof
  • Semiconductor device and forming method thereof
  • Semiconductor device and forming method thereof

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Experimental program
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Embodiment Construction

[0042] As mentioned in the background art, the performance of existing semiconductor devices needs to be improved.

[0043] A method for forming a semiconductor device may include:

[0044] see figure 1 , providing a semiconductor substrate 100 . The semiconductor substrate 100 includes a first region I and a second region II. The first region I includes a first active region (not shown) and a first isolation region (not shown) surrounding the first active region. Wherein, the first isolation region adjacent to the second region II in the first isolation region is the first edge isolation region 101 . The second region II includes a second active region and a second isolation region surrounding the second active region. Wherein, the second isolation region adjacent to the first region I in the second isolation region is the second edge isolation region 201 . For the adjacent first region I and the second region II, the adjacent first edge isolation region 101 and the secon...

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Abstract

The invention discloses a semiconductor device and a forming method thereof. A first well region mask layer used when first well region ion implantation is executed is adopted in the method and serves as a mask layer when first inclined ion implantation is executed subsequently, so materials of the mask layer can be saved, and cost is reduced; meanwhile, by increasing the distance between the edge, surrounding the gate width, in the first well region mask layer and the edge of the corresponding first active region, the first well region mask layer can be prevented from blocking the first inclined ion implantation, so the charge leakage caused by ineffectiveness of the first inclined ion implantation can be avoided; therefore, the performance of the semiconductor device can be improved.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a semiconductor device and a forming method thereof. Background technique [0002] Metal-oxide-semiconductor (MOS) transistors are important devices in modern integrated circuits. Taking the N-channel enhancement type MOS field effect transistor as an example, it uses the gate voltage to control the amount of "induced charges", so as to change the state of the conductive channel formed by these "induced charges", and then achieve the purpose of controlling the drain current. Purpose. [0003] The basic structure of a MOS transistor generally includes a semiconductor substrate, a gate structure on the surface of the semiconductor substrate, and source and drain doped regions in the semiconductor substrate on both sides of the gate structure. [0004] However, the performance of semiconductor devices manufactured by existing methods for manufacturing MOS transistors still ...

Claims

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Application Information

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IPC IPC(8): H01L21/336H01L21/266H01L21/8238H01L29/78H01L27/092
CPCH01L29/66568H01L21/266H01L21/823892H01L29/78H01L27/0928
Inventor 吴晓婧兰启明李琛董天化
Owner SEMICON MFG INT (SHANGHAI) CORP