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TFT substrate structure and preparation method thereof

A substrate and glass substrate technology, applied in the field of TFT substrate structure and its preparation, to reduce costs and improve product yield

Pending Publication Date: 2021-08-31
FUJIAN HUAJIACAI CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The technical problem to be solved by the present invention is to provide a TFT substrate structure and its preparation method to solve the problem of Fog mura caused by polyimide not sticking to the substrate

Method used

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  • TFT substrate structure and preparation method thereof
  • TFT substrate structure and preparation method thereof

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preparation example Construction

[0041] A method for preparing a TFT substrate structure, comprising the following steps:

[0042] S1. A glass substrate is provided, and the surface of the glass substrate is covered with a gate metal layer;

[0043] S2, forming a gate insulating layer and covering the surface of the gate metal layer;

[0044] S3, forming an active layer and covering the surface of the gate insulating layer;

[0045] S4, forming an etching barrier layer covering the surface of the active layer; forming a first via hole in the etching barrier layer;

[0046] S5, forming a source and drain metal layer, covering the surface of the etching barrier layer and filling in the first via hole;

[0047] S6, forming a passivation layer covering the surface of the source-drain metal layer; forming a second via hole in the passivation layer;

[0048] S7, forming a first buffer layer and covering the surface of the passivation layer;

[0049] S8, forming a first metal layer and covering the surface of the ...

Embodiment 1

[0063] Please refer to figure 1 , Embodiment 1 of the present invention is:

[0064] Please refer to figure 1 , a TFT substrate structure, comprising a glass substrate 1, a gate metal layer 2, a gate insulating layer 3, an active layer 4, an etching stopper layer 5, a source and drain layer are sequentially stacked and covered on one side of the glass substrate 1 Pole metal layer 6, passivation layer 7, first buffer layer 8, first metal layer 9, first insulating layer 10, second buffer layer 11, common electrode layer 12 and second insulating layer 13, the etching barrier layer 5 is provided with a first via hole, the first via hole is filled with the source-drain metal layer 6, the passivation layer 7 is provided with a second via hole, and the first insulating layer 10 is provided with a first via hole. Three via holes, the second buffer layer 11 is provided with a fourth via hole, the second insulating layer 13 is provided with a fifth via hole, the second via hole, the t...

Embodiment 2

[0080] Please refer to figure 2 , the second embodiment of the present invention is:

[0081] A method for preparing a TFT substrate structure, comprising the following steps:

[0082] S1. Provide a glass substrate 1, the surface of the glass substrate 1 is covered with a gate metal layer 2;

[0083] S2, forming a gate insulating layer 3 and covering the surface of the gate metal layer 2;

[0084] S3, forming an active layer 4 and covering the surface of the gate insulating layer 3;

[0085] S4, forming an etching barrier layer 5, and covering the surface of the active layer 4; forming a first via hole in the etching barrier layer 5;

[0086] S5, forming the source-drain metal layer 6, and covering the surface of the etching barrier layer 5 and filling in the first via hole;

[0087] S6, forming a passivation layer 7 and covering the surface of the source-drain metal layer 6; forming a second via hole in the passivation layer 7;

[0088] S7, forming a first buffer layer ...

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Abstract

The invention relates to a TFT substrate structure, and especially relates to a TFT substrate structure and a preparation method thereof. A gate metal layer, a gate insulating layer, an active layer, an etching barrier layer, a source and drain metal layer, a passivation layer, a first buffer layer, a first metal layer, a first insulating layer, a second buffer layer, a common electrode layer and a second insulating layer are sequentially stacked and covered on one side face of the glass substrate. The second buffer layer is located between the first insulating layer and the common electrode layer, a second via hole is formed in the passivation layer, a third via hole is formed in the first insulating layer, a fourth via hole is formed in the second buffer layer, a fifth via hole is formed in the second insulating layer, and the second via hole, the third via hole, the fourth via hole and the fifth via hole form an OC hole, so that the cross section of the OC hole is increased, a flow and diffusion path of PI liquid is widened, PI liquid is easier to diffuse and flow into the OC hole, and the problem of Fog mura generation caused by non-sticky PI is solved.

Description

technical field [0001] The invention relates to a TFT substrate structure, in particular to a TFT substrate structure and a preparation method thereof. Background technique [0002] In TFT-LCD (English full name is Thin Film Transistor Liquid Crystal Display, Thin Film Transistor Liquid Crystal Display), the alignment film coated on the CF substrate and TFT substrate plays a role in controlling the alignment direction of liquid crystal molecules. The TFT-LCD alignment film needs to have high mechanical strength and alignment memory function, and the alignment pattern must withstand a high temperature of nearly 200 degrees. Alignment film cannot react with liquid crystal. In engineering applications, polyimide (PI) can meet the above requirements at the same time. [0003] Alignment film requires alignment treatment to effectively control the arrangement of liquid crystal molecules. There are two main types of alignment technology: friction type and non-friction type. Rubb...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L27/12H01L21/77G02F1/1362
CPCG02F1/1362H01L27/1248H01L27/127
Inventor 张桂瑜许汉东王强
Owner FUJIAN HUAJIACAI CO LTD
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