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Ferroelectric material-based three-dimensional flash memory, and manufacture therefor

A ferroelectric material and memory technology, applied in the field of three-dimensional flash memory, can solve problems such as difficult to achieve descaling

Pending Publication Date: 2021-08-31
IUCF HYU (IND UNIV COOP FOUNDATION HANYANG UNIV)
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0013] In the conventional three-dimensional flash memory having the above-mentioned structure, the thickness of the oxide-nitride-oxide layer included in the plurality of vertical structures 230 is 40 nm, and therefore, there is a disadvantage that it is difficult to realize Descaling in the horizontal direction, and, in the characteristics of the charge trap flash memory (CTF, Charge trap flash) using the oxide-nitride-oxide (ONO, Oxide-Nitride-Oxide) layer due to the F-N( FN, Fowler Nordheim) tunneling work requires a high operating voltage of 20V level

Method used

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  • Ferroelectric material-based three-dimensional flash memory, and manufacture therefor
  • Ferroelectric material-based three-dimensional flash memory, and manufacture therefor
  • Ferroelectric material-based three-dimensional flash memory, and manufacture therefor

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Embodiment Construction

[0051] Hereinafter, embodiments will be described in detail with reference to the drawings. However, the invention is not limited or restricted to the various embodiments. Also, the same reference numerals shown in the respective drawings denote the same components.

[0052] In addition, the terms (terminology) used in this specification are used in order to properly express the preferred embodiments of the present invention, and such terms can be changed according to the intention of the user, the operator, or the practice of the technical field to which the present invention belongs. become different. Therefore, these terms should be defined based on the entire content of this specification.

[0053] image 3 To illustrate a cross-sectional view of a three-dimensional flash memory of an embodiment, Figure 4 This is a diagram illustrating memory characteristics of a three-dimensional flash memory according to an embodiment.

[0054] refer to Figure 3 to Figure 4 In on...

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Abstract

Disclosed are: a three-dimensional flash memory in which the degree of integration in a horizontal direction is improved so as to promote integration; and a manufacturing method therefor. A three-dimensional flash memory according to one embodiment comprises: at least one channel layer extending in one direction; at least one ferroelectric film used as a data storage place while being extended in the one direction so as to encompass the at least one channel layer; and a plurality of electrode layers stacked so as to be vertically connected to the at least one ferroelectric film.

Description

technical field [0001] The following embodiments relate to a three-dimensional flash memory, and in more detail, relate to a three-dimensional flash memory with improved integration in the horizontal direction and a manufacturing method thereof. Background technique [0002] Flash memory devices are used as Electrically Erasable Programmable Read Only Memory (EEPRROM, ElectricallyErasable Programmable Read Only Memory), which can be widely used in many aspects, such as computers, digital cameras, MP3 players, game systems, memory Stick (Memory stick), etc. This flash memory device controls the input and output of data electrically through Fowler-Nordheim tunneling or hot electron injection. [0003] In particular, referring to the existing three-dimensional flash memory array figure 1 The array of the three-dimensional flash memory may include a common source line CSL, a bit line BL, and a plurality of cell strings CSTR arranged between the common source line CSL and the b...

Claims

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Application Information

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IPC IPC(8): H01L27/11597H01L27/1159H01L27/11551H01L27/11524H01L21/28H01L29/51
CPCG11C11/2275G11C11/223G11C11/2259G11C11/5657H10B51/20H01L29/516H10B51/30
Inventor 宋润洽崔畅桓郑在景
Owner IUCF HYU (IND UNIV COOP FOUNDATION HANYANG UNIV)
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