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Cleavage method of semiconductor device

A semiconductor and device technology, applied in the field of semiconductor device cleavage, can solve problems such as quality degradation, edge breakage of a single small semiconductor structure, short circuit, etc.

Active Publication Date: 2021-11-12
度亘激光技术(苏州)有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] The object of the present invention is to provide a kind of semiconductor device cleavage method, when the existing semiconductor device is cleaved, when the existing semiconductor device is cleaved, the edge of a single small semiconductor structure caused by stress concentration is broken, the quality is reduced, and the P of the small semiconductor structure after cleavage The technical problem of the short circuit formed by the electrical contact between the surface and the N surface

Method used

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  • Cleavage method of semiconductor device
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  • Cleavage method of semiconductor device

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Embodiment 1

[0045] The semiconductor device cleavage method provided by the embodiment of the present invention includes the following steps:

[0046] S10. Form a recessed structure 400 on the upper surface of the semiconductor device 100 by plasma etching or chemical etching, which is recessed on the lower surface side, from the upper surface of the semiconductor device 100 toward the lower surface, the recessed structure 400 The width gradually decreases. The size of the recessed structure 400 obtained by plasma etching or chemical etching can reach a micron level, and its size is much smaller than the line groove drawn by a scribing knife. Moreover, the width of the recessed structure 400 extends toward the inside of the semiconductor device 100 in a gradually decreasing manner, and cleavage from this position can make stress more concentrated during cleavage, making it easier to cleavage the semiconductor device 100 .

[0047]The semiconductor device cleaving method also includes the...

Embodiment 2

[0072] The difference from Embodiment 1 is that the method of forming the recessed structure 400 in this embodiment is different. In step S10, the recessed structure 400 recessed to the lower surface side is formed on the upper surface of the semiconductor device 100 by means of chemical etching. The steps specifically include steps:

[0073] S121. Form a photoresist layer 200 on the upper surface of the semiconductor device 100, and the photoresist layer 200 has a first opening 210 penetrating through the upper and lower surfaces of the photoresist layer; S122. Form the photoresist layer 200 with the first opening 210 As a mask, the semiconductor device 100 is etched and the first trench 110 is formed.

[0074] A photoresist layer 200 can be processed on the upper surface of the semiconductor device 100 by spin coating, and then a first opening 210 is processed on the photoresist layer 200 by exposure and development, and the first opening 210 penetrates the photoresist layer...

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Abstract

The invention provides a semiconductor device cleaving method, which relates to the technical field of semiconductor processing. The semiconductor device cleavage method includes the following steps: forming a recessed structure on the upper surface of the semiconductor device by plasma etching or chemical etching, which is concave to the lower surface side, from the upper surface of the semiconductor device toward the lower surface, The width of the recessed structure is gradually reduced; an insulating protective layer is formed on the upper surface of the semiconductor device; and the semiconductor device is cleaved along the depth direction of the recessed structure. The width of the recessed structure extends toward the inside of the semiconductor device in a gradually decreasing manner, and the cleavage from this position can make the stress more concentrated during cleavage. Forming an insulating protective layer on the upper surface of the semiconductor device can prevent the solder from easily moving to the side of the semiconductor device during the encapsulation of the small semiconductor device after cleavage, resulting in electrical contact between the P-side electrons and the N-side substrate to form a short circuit and leakage.

Description

technical field [0001] The invention relates to the technical field of semiconductor processing, in particular to a method for cleaving a semiconductor device. Background technique [0002] In the process of semiconductor processing, it is necessary to dissect a whole semiconductor device into multiple individual small semiconductor structures. In the prior art, a scribe is used to draw a cutting line on the whole semiconductor device, and then separate the semiconductor device along the cutting line. The method is similar to the method of cutting a glass plate. [0003] When the above method is used to cut the entire semiconductor device, because the width of the blade of the scribe is relatively large, the width of the scribe line is also relatively large. When the semiconductor device is cleaved, the single small semiconductor structure will be broken when it is separated due to the lack of stress concentration. Resulting in degradation of the quality of small semiconduc...

Claims

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Application Information

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IPC IPC(8): H01L21/78H01L21/3065H01L21/308
CPCH01L21/78H01L21/3065H01L21/308
Inventor 杨国文王希敏惠利省
Owner 度亘激光技术(苏州)有限公司