PMOS (P-channel Metal Oxide Semiconductor) tube driving circuit

Abstract

The invention discloses a PMOS (P-channel Metal Oxide Semiconductor) tube driving circuit. The circuit comprises a first power supply, a second power supply, a third power supply, a first resistor, a second resistor, a third resistor, a fourth resistor, a PMOS tube and a triode, the first power supply is connected with the source electrode of the PMOS tube and one end of the first resistor; the second power supply is connected with the drain electrode of the PMOS tube; the other end of the first resistor is connected with the grid electrode of the PMOS tube and one end of the second resistor; the other end of the second resistor is connected with the collector electrode of the triode; the third power supply is connected with the base electrode of the triode and one end of the third resistor; an emitting electrode of the triode is connected with one end of the fourth resistor; and the other end of the third resistor and the other end of the fourth resistor are grounded. According to the invention, the driving voltage VGS of the PMOS transistor is not affected by the first power supply, the stability of the MOS transistor driving circuit is enhanced, the circuit structure is simple, and the production cost is reduced.

Description

Technical field [0001] The present disclosure generally relates to the technical field of PMOS tube circuits, and more particularly to a PMOS tube driving circuit. Background technique [0002] MOSFET has become an indispensable element of electronics production due to low internal resistance, and has an important component of electronic product production, in mobile phones, laptops, Bluetooth headsets, mobile power, etc. have MOS tube. However, for a MOSFET, its driving circuit, the peak current, the rising rate, etc. of the drive feet output will affect the switching performance of the MOSFET. [0003] At present, the driving circuit of the general PMOS tube is multi-use of the resistance of the triode control. Since the driving voltage Vgs of the PMOS tube is related to the power supply voltage, the control method of this driving circuit is relatively large. Situation, the drive voltage VGS will be affected by the power supply voltage. When the power supply voltage is low, the...

AI Technical Summary

Problems solved by technology

However, for a MOSFET, its driving circuit, the peak current output by the driving pin, the rising rate, etc., will all affect the switching performance of the MOSFET

[0003] At present, the driving circuit of general PMOS transistors mostly adopts the method of resistive voltage division controlled by triodes. Since the driving voltage VGS of PMOS transistors is related to the power supply voltage, if the control method of this driving circuit encounters a situation where the power supply voltage changes greatly situation, the driving voltage VGS will be affected by the power supply voltage

If the power supply voltage is low, the driving voltage VGS will decrease accordingly, which may cause the switching function of the MOS tube to fail; if the power supply voltage is high, the driving voltage VGS will increase accordingly, which may exceed the VGS safety voltage of the MOS tube, increasing Problems such as loop power consumption have greatly limited the usage scenarios of PMOS tubes

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