Diode parameter extraction method and model establishment method suitable for deep turn-off

Abstract

The invention discloses a diode parameter extraction method and a model establishment method suitable for deep turn-off. The method comprises the following steps: obtaining an adjustment voltage based on a bias voltage applied to a diode, a channel turn-on voltage of an active device, and a curve smoothing parameter; based on the adjustment voltage, obtaining an internal bias voltage of the intrinsic diode after the channel is opened; on the basis of the bias voltage applied to the diode, the charge variation in the deep turn-off state is obtained; obtaining a diode charge based on the internal bias voltage of the intrinsic diode and the charge value and the charge variation when the active device channel is completely depleted; and carrying out voltage differential on the diode charge to obtain the diode capacitance. The invention supports charge / capacitance description of diodes based on active devices (such as epitaxial processes of HEMT, pHEMT and the like), especially in a deep turn-off region, the depletion layer capacitance tends to drop with voltage.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a method for establishing a diode model and a method for extracting parameters suitable for deep shutdown. Background technique [0002] In the field of RF and microwave, Schottky diode technology is often used together with other active device technologies for microwave RF design. For example, with HEMT process or pHEMT process, it can be used to design low-noise amplifier circuits or power amplifier circuits for radio frequency microwaves. During the epitaxial growth process of HEMT / pHEMT epitaxy, a layer of two-dimensional electron gas needs to be formed to form the channel of the active device. [0003] However, due to the existence of the epitaxial layer channel, there will be a sharp rise in the junction capacitance when the diode is turned off. This is mainly due to an external voltage causing the channel to turn on and fill with electrons, which increases the jun...

AI Technical Summary

Problems solved by technology

[0010] The first way is to use the pHEMT / HEMT triode model, using the description of the effect of channel opening on capacitance in the triode charge model, and short the drain / source of the triode to form a simple diode model; the disadvantage of this method Yes, it needs to be described by a higher-order or more complex transistor model, which will increase the complexity of the model formula and increase the calculation time of the simulation solver;

[0011] The second way is to use the look-up table model of measured data; the disadvantage of this method is that it can only support DC and small signal simulation, and cannot support large signal simulation

Images