Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Silicon carbide power device packaging shell capable of being uncapped

A technology of power devices and packaging shells, which is applied in the direction of electric solid-state devices, semiconductor devices, semiconductor/solid-state device components, etc., can solve problems such as damage to the chip surface, complicated operation, and performance degradation, so as to prevent performance degradation, facilitate operation, and The effect of spreading the current

Pending Publication Date: 2021-09-17
西安电子科技大学芜湖研究院
View PDF0 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In single event radiation experiments, high-energy particle beams need to be used to directly bombard the surface of the device, and additional capping treatment is required for packaged silicon carbide devices, which is inconvenient to operate
Moreover, in the process of uncapping, it is very likely to damage the surface of the chip, causing artificial damage
In addition, after the radiation experiment is over, the device needs to be repackaged, the operation is complicated, and the chip is exposed to the air for a long time, which is easy to cause performance degradation
Therefore, when performing radiation experiments on devices, it is very inconvenient to use

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Silicon carbide power device packaging shell capable of being uncapped
  • Silicon carbide power device packaging shell capable of being uncapped
  • Silicon carbide power device packaging shell capable of being uncapped

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0033] see figure 1 , figure 2 , an open-cap silicon carbide power device packaging case, comprising: a lower substrate 10 , a positive electrode 20 , a positive lead 21 , a negative electrode 30 and an upper substrate 40 . A silicon carbide chip 60 is provided on the surface of the lower substrate 10 . The positive electrode 20 has a grid structure, the positive electrode 20 is arranged on the surface of the silicon carbide chip 60 , and the positive electrode 20 is electrically connected to the positive electrode lead 21 and the silicon carbide chip 60 . The negative electrode 30 is disposed on the lower substrate 10 , and the negative electrode 30 is electrically connected to the silicon carbide chip 60 . The upper substrate 40 covers the positive electrode 20 , and the upper side of the upper substrate 40 is hinged to the upper side of the lower substrate 10 , and the lower side of the upper substrate 40 is detachably fixedly connected to the lower side of the lower sub...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a silicon carbide power device packaging shell capable of being uncapped. The silicon carbide power device packaging shell comprises a lower substrate, a positive electrode, a positive lead, a negative electrode and an upper substrate. A silicon carbide chip is arranged on the surface of the lower substrate; the positive electrode is of a latticed structure, is arranged on the surface of the silicon carbide chip and is electrically connected with the positive lead and the silicon carbide chip; the negative electrode is arranged on the lower substrate and is electrically connected with the silicon carbide chip; and the upper substrate covers the positive electrode, the upper side of the upper substrate is hinged to the upper side of the lower substrate, and the lower side of the upper substrate is detachably and fixedly connected with the lower side of the lower substrate. According to the invention, the lower substrate and the upper substrate are hinged at the upper side and are detachably connected at the lower side, when a single particle radiation experiment is carried out, after the lower side of the upper substrate and the lower side of the lower substrate are detached, the upper substrate is turned up to form an open cap, so that the structure of the packaging shell does not need to be damaged, and the operation is very convenient.

Description

technical field [0001] The invention belongs to the technical field of microelectronic equipment, and in particular relates to a cap-openable silicon carbide power device packaging shell. Background technique [0002] When testing the radiation resistance performance of silicon carbide devices, it is often necessary to conduct radiation experiments on silicon carbide devices. In single event radiation experiments, it is necessary to use high-energy particle beams to directly bombard the surface of the device. For packaged silicon carbide devices, additional capping treatment is required, which is inconvenient to operate. Moreover, in the process of uncapping, there is a high possibility that the surface of the chip will be damaged, causing artificial damage. In addition, after the radiation experiment is over, the device needs to be repackaged, which is complicated to operate, and the chip is exposed to the air for a long time, which is likely to cause performance degradati...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01L23/10H01L23/04H01L23/48
CPCH01L23/10H01L23/04H01L23/48
Inventor 宋庆文刘科宇袁昊汤晓燕韩超吴勇张玉明
Owner 西安电子科技大学芜湖研究院
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products