Method of forming semiconductor device

Abstract

A method of forming a semiconductor device includes providing a structure having a substrate, first and second channel layers on the substrate, and first and second gate dielectric layers on the first and second channel layers, respectively; forming a first dipole pattern on the first gate dielectric layer, the first dipole pattern having a first dipole material, the first dipole material having a first conductivity type; forming a second dipole pattern on the second gate dielectric layer, the second dipole pattern having a second dipole material having a second conductivity type opposite to the first conductivity type; and annealing the structure to drive elements of the first dipole pattern into the first gate dielectric layer and elements of the second dipole pattern into the second gate dielectric layer.

Description

technical field [0001] Embodiments of the present invention relate to a semiconductor device and its forming method, and in particular to a multi-gate device and its forming method. Background technique [0002] The electronics industry is increasingly demanding smaller and faster electronic devices that can simultaneously support a larger number of increasingly complex and complex functions. To meet these needs, the integrated circuit (IC) industry has a tendency to manufacture low cost, high performance, and low power consumption ICs. To date, these goals have been largely achieved by reducing IC size (eg, the smallest IC component size), thereby increasing production efficiency and reducing associated costs. However, this miniaturization also increases the complexity of the IC manufacturing process. Accordingly, similar advances in IC fabrication processes and technologies are required to achieve continued advances in IC devices and their performance. [0003] One area...

AI Technical Summary

Problems solved by technology

Thus, while existing CMOS devices (multi-gate devices in particular) and methods for fabricating such devices have generally been adequate for their intended purposes, they are not satisfactory in all respects.

Images