Preparation method of hard mask and hard mask

Abstract

The invention discloses a preparation method of a hard mask and the hard mask. The preparation method of the hard mask comprises: providing a silicon wafer; growing a first silicon nitride layer on the upper surface of the silicon wafer, and growing a second silicon nitride layer on the lower surface of the silicon wafer; growing a first silicon oxide layer on the first silicon nitride layer; etching the first silicon oxide layer and the first silicon nitride layer to form a dry etching mask surface; etching the second silicon nitride layer to form a wet etching mask surface; growing a protective layer on the dry etching mask surface and coating a sealing layer on the protective layer; etching a pattern on the wet etching mask surface and reserving a supporting layer; and removing the sealing layer and the protective layer, and etching through the supporting layer on the dry etching mask surface according to the pattern to obtain the hard mask.

Description

technical field [0001] The invention belongs to the technical field of micro-nano processing, and in particular relates to a method for preparing a hard mask and the hard mask. Background technique [0002] The photoresist mask is most commonly used in the field of modern micro-nano processing technology. Although the photoresist mask is relatively dense and has high resolution, because it is a chemical substance, its direct contact with a considerable part of the material will make its performance Therefore, a non-polluting, easy-to-operate and reusable hard mask technology has gradually developed and matured, and silicon nitride hard mask is a typical representative of it. Compared to metal masks, silicon nitride hard masks provide higher resolution and smoother edges; compared to photoresist masks, silicon nitride hard masks do not degrade the properties of the materials they contact , and it can be used repeatedly for one production, which is convenient and easy to oper...

AI Technical Summary

Problems solved by technology

[0003] On the one hand, the traditional silicon nitride hard mask is relatively small in size, and most of the mask pattern structures are within tens of microns, which limits its application range; on the other hand, the mask pattern is relatively thin, and it is easy to break Even breakage resulting in lower yield than traditional SiN hard mask

Images