Air intake and exhaust structure of semiconductor chamber and semiconductor chamber

Abstract

The invention discloses an air intake and exhaust structure of a semiconductor chamber and the semiconductor chamber, wherein the air intake and exhaust structure is arranged between an upper cover and a lower cover of the semiconductor chamber; the air intake and exhaust structure is characterized in that the air intake and exhaust structure comprises an annular main body and an annular support part extending towards the interior of the semiconductor chamber, wherein the inner edge of the annular support part is used for bearing a preheating ring of the semiconductor chamber, an upper chamber is arranged above the annular support part, and a lower chamber is arranged below the annular support part; the annular main body is provided with an air inlet channel for introducing air to the upper chamber and an exhaust channel for exhausting air in the upper chamber; and the side, close to the exhaust channel, of the annular support part is provided with a longitudinal through hole communicating with the upper chamber and the lower chamber, and gas in the lower chamber is exhausted along the exhaust channel through the longitudinal through hole. The distance between the longitudinal through hole and the exhaust channel is closer, the pressure is lower, hydrogen in the lower chamber tends to flow to the longitudinal through hole with the lower pressure, and the situation that the hydrogen in the lower chamber collides with process gas to generate turbulent flow is avoided.

Description

technical field [0001] The present invention relates to the field of semiconductor equipment, and more specifically, to an intake and exhaust structure of a semiconductor chamber and the semiconductor chamber. Background technique [0002] The epitaxial process is a process in which a reaction gas is delivered to the wafer at a high temperature, and the reaction gas undergoes a chemical reaction on the surface of the wafer to deposit a single crystal epitaxial film. In the epitaxial process, many process parameters need to be precisely controlled to achieve high device performance. Among them, the thickness uniformity of the epitaxial layer is one of the key parameters of the epitaxial wafer. [0003] Decompression epitaxy is an epitaxy method with a chamber process pressure of 20torr-100torr. During the epitaxy process, such as figure 1 As shown, the intake and exhaust structure of the process gas is formed by the docking of the upper ring 30 and the lower ring 31, and th...

AI Technical Summary

Problems solved by technology

At the boundary of the wafer, the process gas flowing laterally will collide with each other or with the hydrogen gas coming up from the bottom of the chamber, and turbulent flow will be generated at the edge of the tray 2, resulting in a certain degree of thickness mutation at the edge of the wafer, which affects the epitaxy process. Thickness Uniformity of Wafer Deposited Films (Epilayers)

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