Power device and preparation method thereof
A power device and wide-bandgap technology, applied in the field of power devices and their preparation, can solve the problems of reducing the ability of the device to be waterproof and vapor corrosion, affecting the reliability of the device, cracks in the passivation layer, etc., and achieving the effect of improving reliability.
Active Publication Date: 2021-09-28
XIAMEN SANAN INTEGRATED CIRCUIT
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Problems solved by technology
However, when this kind of power device is subjected to reliability tests such as TCT (Temperature Cycle Test) or TS (Thermal Shock, thermal shock), due to the thermal expansion coefficient of the plastic package, front electrode and passivation layer in the packaged device Mismatch, so there will be stress between them due to mutual extrusion, excessive stress will cause cracks in the passivation layer at the step of the front electrode layer
In this way, the ability of the device to prevent water vapor erosion will be reduced, thereby affecting the reliability of the device
Method used
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[0030]The embodiments set forth below represent the information necessary to enable one skilled in the art to practice the embodiments and illustrate the best mode of practicing the embodiments. Upon reading the following description with reference to the accompanying drawing figures, those skilled in the art will understand the concepts of the disclosure and will recognize applications of these concepts not specifically addressed herein. It should be understood that these concepts and applications are within the scope of this disclosure and the appended claims.
[0031] It will be understood that, although the terms first, second, etc. may be used herein to describe various elements, these elements should not be limited by these terms. These terms are only used to distinguish one element from another. For example, a first element could be termed a second element, and, similarly, a second element could be termed a first element, without departing from the scope of the present...
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The invention relates to a power device and a preparation method thereof and relate to the technical field of semiconductor devices. The power device comprises the following components of: a wide band gap substrate; a wide-band-gap drift layer arranged on the wide-band-gap substrate; an active region and an edge terminal region which are arranged in the wide-band-gap drift layer; a first passivation layer which is arranged on the wide-band-gap drift layer and is configured to cover the surface of the edge terminal region from the edge of the active region; a metal electrode layer which is arranged on the active region and is in Schottky contact with the active region. wherein metal electrode layer is provided with a step higher than the first passivation layer, wherein the step is provided with a first side face facing the first passivation layer and connected with the first passivation layer, a first included angle a2 facing the edge terminal region being formed at the connection position; a first material layer filling the first included angle a2; and a second passivation layer arranged on the first material layer. The expansion coefficient of the material of the first material layer is a, the expansion coefficient of the material of the metal electrode layer is b, the expansion coefficient of the material of the second passivation layer is c, and a,b and c satisfy the relational expression that a > b > c.
Description
technical field [0001] The present disclosure relates to the technical field of semiconductor devices, in particular, to a power device and a manufacturing method thereof. Background technique [0002] Semiconductor power devices, as the core devices in power electronic circuits, are used to realize the efficient transmission and conversion of electric energy and the effective and precise control in the process, so as to realize the high-quality and efficient utilization of electric energy. It is precisely because of the research and development of power semiconductor devices that power electronics technology is developing in the direction of miniaturization, large capacity, high frequency, high efficiency and energy saving, high reliability and low cost. [0003] In traditional semiconductor power devices, in order to prevent external water vapor and mobile ions (such as sodium) from affecting the internal structure of the device, the terminal area of the power device is ...
Claims
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Login to View More IPC IPC(8): H01L29/872H01L29/06H01L29/47H01L23/31H01L21/329H01L21/56
CPCH01L29/872H01L29/0684H01L29/47H01L29/66143H01L23/3171H01L21/56H01L2224/02166
Inventor 郭锦鹏蔡文必郭飞周永田胡洪兴陶永洪王勇
Owner XIAMEN SANAN INTEGRATED CIRCUIT