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Quantum dot light-emitting diode device and preparation method thereof

A quantum dot light-emitting and diode technology, which is used in the manufacture of semiconductor/solid-state devices, electric solid-state devices, semiconductor devices, etc., to achieve the effect of enhancing the distribution of electromagnetic fields

Inactive Publication Date: 2021-09-28
HENAN UNIVERSITY
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0003] The purpose of the present invention is to provide a quantum dot light-emitting diode device and its preparation method to solve the problem that a large number of photons are trapped inside the quantum dot light-emitting diode device in the traditional quantum dot light-emitting diode

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  • Quantum dot light-emitting diode device and preparation method thereof
  • Quantum dot light-emitting diode device and preparation method thereof
  • Quantum dot light-emitting diode device and preparation method thereof

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Embodiment Construction

[0039] The following will clearly and completely describe the technical solutions in the embodiments of the present invention with reference to the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only some, not all, embodiments of the present invention. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the protection scope of the present invention.

[0040] The purpose of the present invention is to provide a quantum dot light emitting diode device and its preparation method to solve the problem that a large number of photons are trapped inside the quantum dot light emitting diode device in the traditional quantum dot light emitting diode.

[0041] In order to make the above objects, features and advantages of the present invention more comprehensible, the present invention will be further described in deta...

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Abstract

The invention discloses a quantum dot light-emitting diode device and a preparation method thereof; a polydimethylsiloxane flexible template with a nanometer fold structure after etching serves as a nanoimprint female template through a nanoimprint technology, and a pattern of the female template is transferred to a PEDOT:PSS layer of the quantum dot light-emitting diode device; the PEDOT:PSS layer with the first nanometer fold structure is formed, and the PEDOT:PSS layer can directionally diverge light, so that light emitted by the quantum dot light-emitting diode device is closer to Lambert emission, waveguide light in the quantum dot light-emitting diode device is inhibited, the first nanometer fold structure directionally emits the light to the outside of a glass substrate again; and captured photons in the quantum dot light-emitting diode device are released, and the problem that a large number of photons are captured in the quantum dot light-emitting diode device in a traditional quantum dot light-emitting diode is solved.

Description

technical field [0001] The invention relates to the technical field of manufacturing quantum dot light emitting diodes, in particular to a quantum dot light emitting diode device and a preparation method thereof. Background technique [0002] The traditional quantum dot light-emitting diode adopts a sandwich multilayer stack structure. Although the quantum yield of the QDs (Quantum Dots, quantum dots) film has reached 90%, due to the difference between the refractive index of the indium tin oxide layer and the organic layer and the glass substrate No match, the photons generated by the internal light-emitting layer are bound between the indium tin oxide layer and the organic layer, so that the highest external quantum efficiency of the quantum dot light-emitting diode device is only 20%. It can be seen that a large number of photons are trapped in the traditional quantum dot light-emitting diode Problems inside the quantum dot light emitting diode device make the external qu...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L51/50H01L51/52H01L51/56
CPCH10K50/115H10K50/85H10K50/854H10K71/00
Inventor 王书杰杜祖亮项洋王啊强方岩
Owner HENAN UNIVERSITY
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