A single event effect pulsed laser test method for gan power devices

Abstract

The invention discloses a GaN power device single-event effect pulsed laser test method, which utilizes the GaN power device single-event effect single- and two-photon absorption mechanism pulse laser equivalent heavy ion evaluation technology, and innovatively adopts a technical method combining theory and experiment ;Taking GaN power devices as a typical application demonstration, aiming at the experimental requirements of single event effects of wide bandgap devices, a theoretical model of the effective energy and equivalent LET value of GaN samples deposited by pulsed laser front and back radiation is formed, and the characterization of the laser quantitative evaluation test is clarified Method and basis: To carry out the comparison test of laser and heavy ion on the sensitivity of single event effect, and to determine the corresponding relationship between the laser effective energy of the device and the LET value of heavy ion. The method of the invention can be used as an important supplement for heavy ion experiments, reduce the cost of experiments, improve the efficiency and accuracy of experiments, and provide test references for the selection of anti-radiation devices and the design of anti-radiation reinforcement in practical applications.

Description

Technical field [0001] The present invention belongs to the evaluation of aerospace electronics radiation effects and reinforcement design, in particular to a single-particle effect pulse laser test method for GaN power devices. Background technique [0002] The gallium nitride (GaN) is used as a third-generation semiconductor material, which is considered to be a semiconductor material that is the most developed since the first generation of semiconductor material silicon (Si), the second-generation semiconductor material arsenide (GaAs) or the like. Although the SI base device is close to the theoretical limit, there is still a certain gap with the third generation of semiconductor performance, and the development space of GaN material is larger. GaN is banned, high-tee, high electron saturation drift speed, high melting point, low pond-state resistance, high breakdown voltage, high anti-radiation performance, these characteristics determine GaN to manufacture high temperature,...

AI Technical Summary

Problems solved by technology

Due to the limitations of the special physical absorption mechanism of the wide-bandgap semiconductor device laser and different optical modulation methods, the accuracy of the test method and model has declined.

Images