Power failure detection circuit with hysteresis function and control system
A technology of power-off detection and hysteresis, which is applied in the direction of measuring current/voltage, measuring devices, and measuring electrical variables, etc. It can solve problems such as power-off signal interference and power-off detection signal jitter, so as to improve reliability and reduce maintenance cost, and the effect of increasing the application range
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Embodiment 1
[0032] A power-down detection circuit with a hysteresis function, including a voltage divider circuit, a hysteresis control circuit, a reference voltage circuit and a comparison circuit;
[0033] The voltage divider circuit is used to set the power-off detection voltage and the hysteresis voltage; the reference voltage circuit is used to generate the reference voltage; the comparison circuit is used to compare the sampling voltage of the voltage divider circuit with the reference voltage of the reference voltage circuit, and transmit the comparison result to The hysteresis control circuit controls the hysteresis control circuit according to the detected voltage.
[0034] With the hysteresis control circuit, the hysteresis voltage can be flexibly adjusted according to the design requirements and application environment, so that the output power-off detection signal is real, effective and jitter-free, so as to ensure that each power-off process can be accurately executed.
[003...
Embodiment 2
[0041] On the basis of Embodiment 1, this embodiment further includes an output circuit, and the comparison result output by the comparison circuit is sent to the output circuit. It also includes an energy storage circuit and a power supply, the energy storage circuit and the power supply are connected in parallel; the energy storage circuit includes a capacitor C1. The energy storage circuit is used to store energy, and the energy supply is guaranteed when the power is off.
[0042] Parallel reference voltage source U2 is AD1580. By adopting the AD1580 reference voltage source chip, its reference optimization performance is better.
[0043] The output circuit includes resistor R5, resistor R6 and MOS tube Q1; one end of resistor R5 is grounded, and the other end is connected to the gate of MOS tube Q1; one end of resistor R6 is connected to the power supply, and the other end is connected to the drain of MOS tube Q1; Source ground. By changing the power supply voltage at t...
Embodiment 3
[0045] On the basis of the above-mentioned embodiments, in this embodiment, at the moment when the power supply starts to be powered on, the voltage of pin 1 of the voltage comparator U1 is greater than the voltage of pin 3, and the voltage of pin 4 of the comparator outputs a high level, and the output MOS transistor Q1 is turned on. The output signal VEN is low level, at the same time the hysteresis control MOS transistor Q2 is turned on, the resistor R3 is shorted, and the voltage divided by the resistor R2 and R1 is sent to the 3 pin of the voltage comparator U1, so the power-on process The calculation formula of detection voltage VDET_ON is as follows;
[0046]
[0047] In the formula, V DET_ON is the detection voltage at power-on; V REFis the reference voltage of the reference chip U2; R1 and R2 are voltage dividing resistors for setting the power-down detection voltage.
[0048] Before the power supply starts to lose power, the voltage of pin 1 of voltage comparato...
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